Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

HAT1047R Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # HAT1047R
Description  Silicon P Channel Power MOS FET High Speed Power Switching
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT1047R Datasheet(HTML) 3 Page - Renesas Technology Corp

  HAT1047R Datasheet HTML 1Page - Renesas Technology Corp HAT1047R Datasheet HTML 2Page - Renesas Technology Corp HAT1047R Datasheet HTML 3Page - Renesas Technology Corp HAT1047R Datasheet HTML 4Page - Renesas Technology Corp HAT1047R Datasheet HTML 5Page - Renesas Technology Corp HAT1047R Datasheet HTML 6Page - Renesas Technology Corp HAT1047R Datasheet HTML 7Page - Renesas Technology Corp HAT1047R Datasheet HTML 8Page - Renesas Technology Corp HAT1047R Datasheet HTML 9Page - Renesas Technology Corp Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 10 page
background image
HAT1047R, HAT1047RJ
Rev.5.00, Aug.27.2003, page 3 of 9
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
–30
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20
——mV
IG = ±100
µA, VDS = 0
Gate to source leak current
IGSS
——
±10
µAVGS = ± 16V, VDS = 0
Zero gate voltage drain current
IDSS
——
±1
µAVDS = –30 V, VGS = 0
Zero gate voltage
HAT1047R
IDSS
——
µAVDS = –24 V, VGS = 0
drain current
HAT1047RJ
IDSS
–20
µA
Ta = 125°C
Gate to source cutoff voltage
VGS(off)
–1.0
–2.5
V
VDS = –10 V, ID = –1 mA
Static drain to source on state
RDS(on)
1012m
ID = –7 A, VGS = –10 V
Note4
resistance
RDS(on)
1925m
ID = –7 A, VGS = –4.5 V
Note4
Forward transfer admittance
|yfs|9.6
16
S
ID = –7 A, VDS = –10 V
Note4
Input capacitance
Ciss
3500
pF
VDS = –10 V
Output capacitance
Coss
750
pF
VGS = 0
Reverse transfer capacitance
Crss
520
pF
f = 1 MHz
Total gate charge
Qg
64
nc
VDD = –10 V
Gate to source charge
Qgs
10
nc
VGS = –10 V
Gate to drain charge
Qgd
12
nc
ID = –14 A
Turn-on delay time
td(on)
—23
ns
VGS = –10 V, ID = –7A
Rise time
tr
—45
ns
VDD
≅ –10 V
Turn-off delay time
td(off)
—80
ns
RL = 1.43
Fall time
tf
—25
ns
RL = 4.7
Body–drain diode forward voltage
VDF
–0.82
–1.07
V
IF = –14 A, VGS = 0
Note4
Body–drain diode reverse
recovery time
trr
45
ns
IF = –14 A, VGS = 0
diF/ dt = 100 A/
µs
Notes: 4. Pulse test


Similar Part No. - HAT1047R

ManufacturerPart #DatasheetDescription
logo
VBsemi Electronics Co.,...
HAT1047R VBSEMI-HAT1047R Datasheet
1Mb / 9P
   P-Channel 30-V (D-S) MOSFET
HAT1047RJ VBSEMI-HAT1047RJ Datasheet
1Mb / 9P
   P-Channel 30-V (D-S) MOSFET
logo
Renesas Technology Corp
HAT1047R RENESAS-HAT1047R_15 Datasheet
129Kb / 12P
   Silicon P Channel Power MOS FET High Speed Power Switching
More results

Similar Description - HAT1047R

ManufacturerPart #DatasheetDescription
logo
Renesas Technology Corp
HAT1055R RENESAS-HAT1055R_15 Datasheet
136Kb / 12P
   Silicon P Channel Power MOS FET High Speed Power Switching
logo
Hitachi Semiconductor
HAT1029R HITACHI-HAT1029R Datasheet
53Kb / 10P
   Silicon P Channel Power MOS FET High Speed Power Switching
logo
Renesas Technology Corp
HAT1065R RENESAS-HAT1065R Datasheet
61Kb / 4P
   Silicon P Channel Power MOS FET High Speed Power Switching
HAT1020R RENESAS-HAT1020R_15 Datasheet
109Kb / 9P
   Silicon P Channel Power MOS FET High Speed Power Switching
logo
Hitachi Semiconductor
HAT1025R HITACHI-HAT1025R Datasheet
56Kb / 9P
   Silicon P Channel Power MOS FET High Speed Power Switching
HAT1033T HITACHI-HAT1033T Datasheet
53Kb / 9P
   Silicon P Channel Power MOS FET High Speed Power Switching
HAT1038R HITACHI-HAT1038R Datasheet
60Kb / 10P
   Silicon P Channel Power MOS FET High Speed Power Switching
logo
Renesas Technology Corp
HAT1054R RENESAS-HAT1054R Datasheet
96Kb / 8P
   Silicon P Channel Power MOS FET High Speed Power Switching
HAT1024R RENESAS-HAT1024R_15 Datasheet
115Kb / 10P
    Silicon P Channel Power MOS FET High Speed Power Switching
HAT1038R RENESAS-HAT1038R_15 Datasheet
248Kb / 10P
   Silicon P Channel Power MOS FET High Speed Power Switching
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com