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HAT1047R Datasheet(PDF) 3 Page - Renesas Technology Corp |
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HAT1047R Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 10 page HAT1047R, HAT1047RJ Rev.5.00, Aug.27.2003, page 3 of 9 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 ——mV IG = ±100 µA, VDS = 0 Gate to source leak current IGSS —— ±10 µAVGS = ± 16V, VDS = 0 Zero gate voltage drain current IDSS —— ±1 µAVDS = –30 V, VGS = 0 Zero gate voltage HAT1047R IDSS —— — µAVDS = –24 V, VGS = 0 drain current HAT1047RJ IDSS — — –20 µA Ta = 125°C Gate to source cutoff voltage VGS(off) –1.0 — –2.5 V VDS = –10 V, ID = –1 mA Static drain to source on state RDS(on) — 1012m Ω ID = –7 A, VGS = –10 V Note4 resistance RDS(on) — 1925m Ω ID = –7 A, VGS = –4.5 V Note4 Forward transfer admittance |yfs|9.6 16 — S ID = –7 A, VDS = –10 V Note4 Input capacitance Ciss — 3500 — pF VDS = –10 V Output capacitance Coss — 750 — pF VGS = 0 Reverse transfer capacitance Crss — 520 — pF f = 1 MHz Total gate charge Qg — 64 — nc VDD = –10 V Gate to source charge Qgs — 10 — nc VGS = –10 V Gate to drain charge Qgd — 12 — nc ID = –14 A Turn-on delay time td(on) —23 — ns VGS = –10 V, ID = –7A Rise time tr —45 — ns VDD ≅ –10 V Turn-off delay time td(off) —80 — ns RL = 1.43 Ω Fall time tf —25 — ns RL = 4.7 Ω Body–drain diode forward voltage VDF — –0.82 –1.07 V IF = –14 A, VGS = 0 Note4 Body–drain diode reverse recovery time trr — 45 — ns IF = –14 A, VGS = 0 diF/ dt = 100 A/ µs Notes: 4. Pulse test |
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