SILICON MOS FET POWER AMPLIFIER, 330-380MHz, 7W, FM PORTABLE RADIO

M68732SL

MITSUBISHI RF POWER MODULE

Nov. ´97

1

PIN:

: RF INPUT

: RF OUTPUT

GND: FIN

BLOCK DIAGRAM

1

2

3

4

5

4

5

3

2

Symbol

Parameter

Test conditions

Limits

Min

Max

Unit

f

-

Frequency range

Output power

Total efficiency

2nd. harmonic

Input VSWR

Load VSWR tolerance

330

380

7

45

-25

No degradation or

destroy

MHz

W

%

dBc

-

-

Note. Above parameters, ratings, limits and test conditions are subject to change.

Symbol

Parameter

Conditions

Ratings

Unit

°C unless otherwise noted)

Note. Above parameters are guaranteed independently.

V

9.2

Supply voltage

V

4

Gate bias voltage

mW

70

Input power

W

10

Output power

°C

-30 to +100

Operation case temperature

°C

-40 to +110

Storage temperature

Ω

Ω

Ω

Stability

4

Load VSWR

<4:1

-

-

No parasitic oscillation

OUTLINE DRAWING

H46

Dimensions in mm

30±0.2

26.6±0.2

21.2±0.2

0.45

6±1

23.9±1

13.7±1

18.8±1

2-R1.5±0.1

1

2

3

4

5