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TFDS4400-TR3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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TFDS4400-TR3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 14 page TFDS4400 Vishay Semiconductors Rev. A1.5, 31-May-00 3 (14) www.vishay.com Document Number 82524 Absolute Maximum Ratings Reference point Pin GND unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameters Test Conditions Symbol Min. Typ. Max. Unit Supply Voltage Range 0 V ≤ VCC2 ≤ 6 V VCC1 – 0.5 6 V Su ly Voltage Range 0 V ≤ VCC1 ≤ 6 V VCC2 – 0.5 6 V Input Currents For all Pins, except IRED Anode Pin 10 mA Output Sink Current 25 mA Power Dissipation See Derating Curve PD 200 mW Junction Temperature TJ 125 °C Ambient Temperature Range (Operating) Tamb –25 +85 °C Storage Temperature Range Tstg –25 +85 °C Soldering Temperature See Recommended Solder Profile 215 240 °C Average IRED Current IIRED (DC) 100 mA Repetitive Pulsed IRED Current t < 90 µs, ton < 20% IIRED (RP) 500 mA IRED Anode Voltage VIREDA – 0.5 6 V Transmitter Data Input Voltage VTxd – 0.5 VCC1+0.5 V Receiver Data Output Voltage VRxd – 0.5 VCC1+0.5 V Virtual Source Size Method: (1–1/e) encircled energy d 2.5 2.8 mm Maximum Intensity for Class 1 Operation of IEC825–1 or EN60825–1 (worst case IrDA SIR pulse pattern *) EN60825, 1997 400 mW/sr *) Note: Transmitteddata: continuously transmitted “0”. In normal data transfer operation “0” and “1” will be transmitted with the same probability. Therefore, for that case, about a factor of two of safety margin is included. However, for worst case thermal stress testing such data pattern are often used and for this case the 400 mW/sr value has to be taken. |
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