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TFDS4400-TR3 Datasheet(PDF) 3 Page - Vishay Siliconix

Part # TFDS4400-TR3
Description  SIR Transceiver Module (115.2 kbit/s) 2.7 V to 5.5 V
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TFDS4400-TR3 Datasheet(HTML) 3 Page - Vishay Siliconix

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TFDS4400
Vishay Semiconductors
Rev. A1.5, 31-May-00
3 (14)
www.vishay.com
Document Number 82524
Absolute Maximum Ratings
Reference point Pin GND unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Supply Voltage Range
0 V
≤ VCC2 ≤ 6 V
VCC1
– 0.5
6
V
Su
ly Voltage Range
0 V
≤ VCC1 ≤ 6 V
VCC2
– 0.5
6
V
Input Currents
For all Pins,
except IRED Anode Pin
10
mA
Output Sink Current
25
mA
Power Dissipation
See Derating Curve
PD
200
mW
Junction Temperature
TJ
125
°C
Ambient Temperature
Range (Operating)
Tamb
–25
+85
°C
Storage Temperature
Range
Tstg
–25
+85
°C
Soldering Temperature
See Recommended
Solder Profile
215
240
°C
Average IRED Current
IIRED (DC)
100
mA
Repetitive Pulsed IRED
Current
t < 90
µs, ton < 20%
IIRED (RP)
500
mA
IRED Anode Voltage
VIREDA
– 0.5
6
V
Transmitter Data Input
Voltage
VTxd
– 0.5
VCC1+0.5
V
Receiver Data Output
Voltage
VRxd
– 0.5
VCC1+0.5
V
Virtual Source Size
Method:
(1–1/e) encircled energy
d
2.5
2.8
mm
Maximum Intensity for
Class 1 Operation of
IEC825–1 or EN60825–1
(worst case IrDA SIR
pulse pattern *)
EN60825, 1997
400
mW/sr
*)
Note:
Transmitteddata: continuously transmitted “0”. In normal data transfer operation “0” and “1” will be transmitted
with the same probability. Therefore, for that case, about a factor of two of safety margin is included. However,
for worst case thermal stress testing such data pattern are often used and for this case the 400 mW/sr value
has to be taken.


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