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LM4050BEM3X-2.0 Datasheet(PDF) 7 Page - National Semiconductor (TI) |
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LM4050BEM3X-2.0 Datasheet(HTML) 7 Page - National Semiconductor (TI) |
7 / 15 page LM4050-8.2 Electrical Characteristics Boldface limits apply for T A =TJ =TMIN to TMAX; all other limits TA =TJ = 25˚C. The grades A, B and C designate initial Reverse Breakdown Voltage tolerances of ±0.1% and ±0.2% and 0.5% respectively. Symbol Parameter Conditions Typical (Note 4) LM4050AIM3 LM4050AEM3 Limits (Note 5) LM4050BIM3 LM4050BEM3 Limits (Note 5) LM4050CIM3 LM4050CEM3 Limits (Note 5) Units (Limit) VR Reverse Breakdown Voltage IR = 150 µA 8.192 V Reverse Breakdown Voltage Tolerance (Note 6) IR = 150 µA ±8.2 ±16 ±41 mV (max) Industrial Temp. Range ±35 ±43 ±68 mV (max) Extended Temp. Range ±49 ±57 ±82 mV (max) IRMIN Minimum Operating Current 74 µA 91 91 91 µA (max) Industrial Temp. Range 95 95 95 µA (max) Extended Temp. Range 100 100 100 µA (max) ∆VR/∆T Average Reverse Breakdown Voltage Temperature Coefficient (Note 6) IR =10 mA ±40 ppm/˚C IR =1 mA ±20 ppm/˚C IR = 150 µA ±20 ±50 ±50 ±50 ppm/˚C (max) ∆VR/∆IR Reverse Breakdown Voltage Change with Operating Current Change (Note 7) IRMIN ≤ IR ≤ 1 mA 0.6 mV 1.3 1.3 1.3 mV (max) 2.5 2.5 2.5 mV (max) 1mA ≤ IR ≤ 15 mA 7.0 mV 10.0 10.0 10.0 mV (max) 18.0 18.0 18.0 mV (max) ZR Reverse Dynamic Impedance IR = 1 mA, f = 120 Hz, 0.6 Ω IAC = 0.1 IR eN Wideband Noise IR = 150 µA 150 µVrms 10 Hz ≤ f ≤ 10 kHz ∆VR Reverse Breakdown Voltage Long Term Stability t = 1000 hrs T = 25˚C ±0.1˚C 120 ppm IR = 150 µA VHYST Thermal Hysteresis (Note 8) ∆T = −40˚C to 125˚C 2.3 mV www.national.com 7 |
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