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M5M51016BTP-10VL-I Datasheet(PDF) 7 Page - Mitsubishi Electric Semiconductor

Part # M5M51016BTP-10VL-I
Description  1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

M5M51016BTP-10VL-I Datasheet(HTML) 7 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI LSIs
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
MITSUBISHI
ELECTRIC
M5M51016BTP,RT-10VL-I,
-10VLL-I
9 Jul ,1997
(Ta = -40 ~ 85
, unless otherwise noted)
Symbol
Parameter
V
V
Max
Typ
Limits
Min
Test conditions
Unit
µA
0.2V
t rec (PD)
3.0V
V
(3) POWER DOWN CHARACTERISTICS
BC control mode
CS control mode
POWER DOWN CHARACTERISTICS
2
(1) ELECTRICAL CHARACTERISTICS
100
2.0
0.6
0.2
-VLL
-VL
(Note 7)
0.3
20
Power down set up time
Power down recovery time
(2) TIMING REQUIREMENTS (Ta = -40 ~ 85
, unless otherwise noted )
VCC (PD)
VI (BC)
VI (CS)
ICC (PD)
Power down supply voltage
Byte control input BC1 & BC2
Chip select input CS
Power down supply current
3.0V
VCC(PD)
VCC(PD)
3.0V
VCC = 3V
tsu (PD)
trec (PD)
Symbol
Parameter
ns
Max
Typ
Limits
Min
Test conditions
Unit
0
5
ms
3.0V
t su (PD)
0.2V
2.0V
t su (PD)
3.0V
3.0V
2.0V
t rec (PD)
VCC
BC1 & BC2
VCC
CS
7
C
o
<
<
1) CS
0.2V
CS
VCC
0.2V,other inputs=0
~3V
2) BC1 & BC2
Vcc
0.2V,
other inputs = 0
~ 3V
>
>
<
Note7. ICC (PD) = 1
µA in case of Ta = 25 C
o
C
o
BC1 & BC2
VCC
0.2V
>
CS
0.2V
<


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