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M5M44265CTP-5S Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor

Part # M5M44265CTP-5S
Description  EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

M5M44265CTP-5S Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor

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EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S
MITSUBISHI LSIs
5
Read and Refresh Cycles
Note 22: Either
tRCH or tRRH must be satisfied for a read cycle.
Limits
Min
Max
Parameter
Read cycle time
RAS low pulse width
CAS low pulse width
Symbol
tRC
Unit
Min
Max
Min
Max
ns
ns
ns
ns
ns
ns
tRAS
tCAS
tCSH
tRSH
tRCS
CAS hold time after RAS low
Read setup time before CAS low
Read hold time after CAS high
(Note 22)
tRCH
tRRH
ns
ns
tRAL
tOCH
tORH
RAS hold time after CAS low
Read hold time after RAS high
Column address to RAS hold time
CAS hold time after OE low
RAS hold time after OE low
ns
ns
ns
10000
10000
10000
10000
10000
10000
0
0
90
50
8
40
13
0
25
13
13
0
0
110
60
10
48
15
0
30
15
15
0
0
130
70
13
55
20
0
35
20
20
(Note 22)
M5M44265C-5,-5S M5M44265C-6,-6S M5M44265C-7,-7S
Limits
Min
Max
Parameter
Refresh cycle time
RAS high pulse width
Delay time, RAS low to CAS low
Symbol
tREF
Unit
Min
Max
Min
Max
ms
ns
ns
ns
ns
ns
tRP
tRCD
tCRP
tRPC
tCPN
Delay time, CAS high to RAS low
Delay time, RAS high to CAS low
CAS high pulse width
(Note 20)
(Note 16)
(Note 17)
(Note 18)
ns
ns
ns
ns
ns
ns
tRAD
tASR
tASC
tRAH
tCAH
tT
Column address delay time from RAS low
Row address setup time before RAS low
Column address setup time before CAS low
Row address hold time after RAS low
Column address hold time after CAS low
Transition time
TIMING REQUIREMENTS (For Read, Write, Read-Modify-Write, Refresh and Hyper-Page Mode Cycles)
(Note 19)
(Note 19)
Delay time, data to CAS low
Delay time, data to OE low
Delay time, CAS high to data
Delay time, OE high to data
tDZC
tDZO
tCDD
tODD
42
35
0
30
13
50
20
5
13
15
10
10
0
0
1
0
0
20
38
30
13
50
32
25
0
40
10
50
18
5
8
13
8
8
0
0
1
0
50
20
5
10
15
0
0
0
13
13
10
10
0
1
0
0
15
15
ns
ns
ns
ns
Note 14: The timing requirements are assumed
tT=2ns.
15: VIH(min) and VIL(max) are reference levels for measuring timing of input signals.
16:
tRCD(max) is specified as a reference point only. If tRCD is less than tRCD(max), access time is tRAC. If tRCD is greater than tRCD(max), access time is
controlled exclusively by
tCAC or tAA.
17:
tRAD(max) is specified as a reference point only. If tRAD
≥ tRAD(max) and tASC ≤ tASC(max), access time is controlled exclusively by tAA.
18:
tASC(max) is specified as a reference point only. If tRCD
≥ tRCD(max) and tASC ≥ tASC(max), access time is controlled exclusively by tCAC.
19: Either
tDZC or tDZO must be satisfied.
20: Either
tRDD or tCDD or tODD must be satisfied.
21:
tT is measured between VIH(min) and VIL(max).
(Ta=0~70˚C, VCC=5V±10%, VSS=0V, unless otherwise noted, see notes 14,15)
20
(Note 20)
(Note 21)
M5M44265C-5,-5S M5M44265C-6,-6S M5M44265C-7,-7S
8.2
8.2
8.2
ms
tREF
Refresh cycle time
*
128
128
128
(Note 20)
Delay time, RAS high to data
tRDD
13
15
ns
20
tCAL
Column address to CAS hold time
ns
13
18
23


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