NTJD4105CT4 datasheet(3/8 Pages) ONSEMI

Part #	NTJD4105CT4

Description	Small Signal MOSFET 20 V / ??.0 V, Complementary, 0.63 A / ??.775 A, SC??8

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NTJD4105C

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TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

0

1.4

1

6

2

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

0.6

0.2

0

Figure 1. On−Region Characteristics

0.4

1.2

2

1.2

2.4

1

0.6

0.2

0.8

0

Figure 2. Transfer Characteristics

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.1

0.4

1

0.3

0.2

0

Figure 3. On−Resistance vs. Drain Current and

Temperature

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Temperature

−50

0

−25

25

1.4

1.2

1

0.8

0.6

50

125

100

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

TJ = 25°C

0.7

0.2

0.6

TJ = −55°C

TJ = 125°C

75

150

ID = 0.63 A

VGS = 4.5 V

and 2.5 V

4

25

°C

2

1.2 V

0

1.4

Figure 6. Capacitance Variation

1.4 V

1.6 V

1.8 V

10

8

VDS ≥ 10 V

0.4

VGS = 2 V

VGS = 4.5 V to 2.2 V

0.4

0.8

1.2

0.8

0.4

1.6

TJ = 125°C

1.2

0.8

VGS = 4.5 V

TJ = −55°C

TJ = 25°C

0.1

0.4

1

0.3

0.2

0

ID, DRAIN CURRENT (AMPS)

0.7

0.2

0.6

TJ = 125°C

0

1.4

0.4

1.2

0.8

VGS = 2.5 V

TJ = −55°C

TJ = 25°C

VGS = 0 V

10

0

80

60

40

20

0

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

TJ = 25°C

Coss

Ciss

Crss

520

15

0.6

0.5

0.6

1.8

1.6

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