M5M29WB160BWG datasheet(1/25 Pages) MITSUBISHI

Part #	M5M29WB160BWG

Description	16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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MITSUBISHI LSIs

16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)

CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

M5M29GB/T160BVP-80

Sep 1999. Rev2.0

1

DESCRIPTION

The MITSUBISHI Mobile FLASH M5M29GB/T160BVP are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with

alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in

one bank while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for

mobile and personal computing, and communication products. The M5M29GB/T160BVP are fabricated by CMOS technology for the

peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in in 48pin TSOP(I) .

FEATURES

Boot Block

M5M29GB160BVP

Bottom Boot

M5M29GT160BVP

Top Boot

Other Functions

Soft Ware Command Control

Selective Block Lock

Erase Suspend/Resume

Program Suspend/Resume

Status Register Read

Alternating Back Ground Program/Erase Operation

Between Bank(I) and Bank(II)

Package

48-Lead, 12mm x 20mm TSOP (type-I)

Organization

1048,576 word x 16bit

2,097,152 word x 8 bit

Supply voltage

................................

VCC = 2.7~3.6V

Access time

80ns (Vcc=3.3V+/-0.3V)

90ns (Vcc=2.7~3.6V)

Power Dissipation

Read

54 mW (Max. at 5MHz)

(After Automatic Power saving)

0.33

mW (typ.)

Program/Erase

126 mW (Max.)

Standby

0.33

mW (typ.)

Deep power down mode

0.33

mW (typ.)

Auto program for Bank(I)

Program Time

4ms (typ.)

Program Unit

(Byte Program)

1word/1byte

(Page Program)

128word/256byte

Auto program for Bank(II)

Program Time

4ms (typ.)

Program Unit

128word/256byte

Auto Erase

Erase time

40 ms (typ.)

Erase Unit

Bank(I)

Boot Block

16Kword/32Kbyte x 1

Parameter Block

16Kword/32Kbyte x 7

Bank(II) Main Block

32Kword/64Kbyte x 28

Program/Erase cycles

100Kcycles

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APPLICATION

Code Strage

Digital Cellular Phone

Telecommunication

Mobile Computing Machine

PDA (Personal Digital Assistance)

Car Navigation System

Video Game Machine

........................

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PIN CONFIGURATION (TOP VIEW)

NC : NO CONNECTION

Outline 48pin TSOP type-I (12 X 20mm)

VP(Normal bend)

M5M29GB/T

160BVP

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

48

47

46

45

A16

CE#

DQ0

A0

GND

OE#

BYTE#

DQ8

DQ1

DQ9

DQ2

VCC

GND

DQ10

DQ3

DQ11

DQ4

DQ12

DQ5

DQ13

DQ6

DQ14

DQ7

DQ15/A-1

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

A18

A17

RY/BY#

A11

A10

A15

17

18

19

20

21

22

23

24

A13

A12

A14

A9

A8

NC

RP#

A7

A6

A5

A4

A1

A2

A3

WE#

WP#

160BVP

NC

A19

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M5M29WB160BWG Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

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