M5M29FT800RV-12 datasheet(6/14 Pages) MITSUBISHI

Part #	M5M29FT800RV-12

Description	8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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MITSUBISHI LSIs

M5M29FB/T800FP,VP,RV-80,-10,-12

May 1997 , Rev.6.1

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)

CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

6

CAPACITANCE

Symbol

Parameter

Test conditions

pF

Unit

Max

8

12

Typ

Min

Limits

Ta = 25°C, f = 1MHz, Vin = Vout = 0V

Input capacitance (Address, Control Pins)

Output capacitance

CIN

COUT

Conditions

ABSOLUTE MAXIMUM RATINGS

Parameter

With respect to Ground

Symbol

Vcc

All input or output voltage except Vcc,A9,/RP

VI1

Vcc voltage

1)

Unit

V

Min

Max

4.6

-0.2

-0.6

14.0

Ambient temperature

Temperature under bias

Ta

Tbs

Storage temperature

Tstg

°C

0

70

-10

80

-65

125

Output short circuit current

I OUT

mA

100

VI2

A9,RP supply voltage

-0.6

4.6

V

1) Minimum DC voltage is -0.5V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <20ns. Maximum DC voltage

on input/output pins is VCC+0.5V which, during transitions, may overshoot to VCC+1.5V for periods <20ns.

DC ELECTRICAL CHARACTERISTICS (Ta = 0 ~ 70°C, Vcc = 3.3V±0.3V, unless otherwise noted)

Symbol

Parameter

Max

Typ1)

Limits

Min

Test conditions

Unit

VCC standby current

ILO

±10

Output leakage current

µA

0V

≤VOUT≤VCC

ILI

Input leakage current

µA

0V

≤VIN≤VCC

±1.0

VCC deep powerdown current

Output high voltage

V

VOL

Output low voltage

V

IOL = 5.8mA

0.45

Vcc+0.5

VIH

Input high voltage

V

2.0

0.8

VIL

Input low voltage

– 0.5

VOH1

IOH = –2.5mA

0.85Vcc

V

VOH2

IOH = –100µA

Vcc–0.4

V

All currents are in RMS unless otherwise noted.

1) Typical values at Vcc=3.3V, Ta=25°C

2) To protect against initiation of write cycle during Vcc power-up/ down, a write cycle is locked out for Vcc less than VLKO.

If Vcc is less than VLKO, Write State Machine is reset to read mode. When the Write State Machine is in Busy state, if Vcc is less than VLKO, the alteration of memory contents

may occur.

ICC3

VCC program current

mA

40

VCC = 3.6V, VIN=VIL/VIH, /CE = /RP =/WP = VIH

ICC4

VCC erase current

mA

40

VCC = 3.6V, VIN=VIL/VIH, /CE = /RP =/WP = VIH

VID

A9 intelligent identifier voltage

11.4

12.6

V

12.0

VIHH

11.4

12.6

V

/RP unlock voltage

12.0

VLKO

Low VCC Lock-Out voltage 2)

1.5

2.5

V

I RP

/RP all block unlock current

/RP = VHH max

100

µA

IID

A9 intelligent identifier current

A9 = VID max

100

µA

ICC5

VCC suspend current

200

VCC = 3.6V, VIN=VIL/VIH, /CE = /RP =/WP = VIH

µA

ISB2

5

VCC = 3.6V, VIN=GND or VCC,

/CE = /RP = /WP= VCC±0.3V

µA

1

25

mA

ICC1

VCC read current for Word or Byte

VCC = 3.6V, VIN=VIL/VIH, /CE = VIL,

/RP=OE=VIH, f = 10MHz, IOUT = 0mA

7

ISB1

VCC = 3.6V, VIN=VIL/VIH, /CE = /RP =/WP = VIH

µA

200

50

ICC2

30

mA

VCC Write current for Word or Byte

VCC = 3.6V,VIN=VIL/VIH, /CE =/WE= VIL,

/RP=/OE=VIH

VCC = 3.6V, VIN=VIL/VIH, /RP = VIL

µA

15

5

ISB3

µA

1

ISB4

VCC = 3.6V, VIN=GND or VCC, /RP =GND±0.3V

5

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M5M29FT800RV-12 Datasheet(PDF) 6 Page - Mitsubishi Electric Semiconductor

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