MITSUBISHI LSIs

16,777,216-BIT (1048,576-WORD BY16-BIT)

CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

M5M29GB/T161BWG

Sep.1999. Rev4.0

11

Read-Only Mode

Write Mode (WE# control)

Timing measurements are made under AC waveforms for read operations.

Symbol

Parameter

Limits

Address access time

Chip enable to output in low-Z

Chip enable access time

Output enable access time

Chip enable high to output in high Z

Read cycle time

Output hold from CE#, OE#, addresses

Output enable to output in low-Z

Output enable high to output in high Z

RP# low to output high-Z

RP# recovery to CE# low

Unit

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

Vcc=2.7-3.6V

90

0

90

30

25

90

0

0

25

150

150

Max

Min

Typ

90ns

Read timing parameters during command write operations mode are the same as during read-only operations mode.

Typical values at Vcc=3.3V, Ta=25°C

Symbol

Parameter

Write cycle time

Data hold time

Data set-up time

Address hold time

Address set-up time

Limits

90ns

90

50

50

Max

Min

Typ

0

0

Unit

ns

ns

ns

ns

ns

Write pulse width

Chip enable hold time

Chip enable set-up time

Write pulse width high

RP# high recovery to write enable low

Block Lockhold from valid SRD

Write enable high to F-RY/BY# low

Duration of auto-program operation

Duration of auto-block erase operation

Block Lock set-up to write enable high

OE# hold to WE# Low

150

4

40

90

80

600

60

0

30

0

90

0

0

ns

ns

ns

ns

ns

ns

ns

ms

ms

ns

ns

Vcc=2.7-3.6V

ns

ns

10

30

OE# hold from WE# high

-

Latency between Read and Write FFH or 71H