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M5M29FB800VP-10 Datasheet(PDF) 7 Page - Mitsubishi Electric Semiconductor |
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M5M29FB800VP-10 Datasheet(HTML) 7 Page - Mitsubishi Electric Semiconductor |
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7 / 14 page  MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 May 1997 , Rev.6.1 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 7 Read-Only Mode AC ELECTRICAL CHARACTERISTICS (Ta = 0 ~70°C, Vcc = 3.3±0.3V) Write Mode (/WE control) AC ELECTRICAL CHARACTERISTICS (Ta = 0 ~ 70°C, Vcc = 3.3V±0.3V) Symbol Parameter Unit Max Min Max Min Limits M5M29FB/T800-10 M5M29FB/T800-12 Timing measurements are made under AC waveforms for read operations. Typ Typ Read timing parameters during command write operations mode are the same as during read-only operations mode. Typical values at Vcc=3.3V, Ta=25°C Max Min M5M29FB/T800-80 ta (AD) Address access time ns 100 120 tAVQV 80 tCLZ Chip enable to output in low-Z ns 0 0 tELQX 0 ta (CE) Chip enable access time ns 100 120 tELQV 80 ta (OE) Output enable access time ns 50 60 tGLQV 40 tDF(CE) Chip enable high to output in high Z ns 25 30 tEHQZ 25 tRC Read cycle time ns 100 120 tAVAV 80 /BYTE low to output high-Z ns 30 25 tBHZ tFLQZ 25 Typ tWHGL /OE hold from /WE high tOEH /CE low to /BYTE high or low tBCD ns 5 5 tELFL/H 5 ns 100 120 80 ns 0 0 0 tOH Output hold from /CE, /OE, addresses tOH /BYTE access time ns 120 100 ta(BYTE) 80 tFL/HQV tOLZ ns 0 0 tGLQX 0 Output enable to output in low-Z tDF(OE) ns tGHQZ Output enable high to output in high Z 25 30 25 tPHZ /RP low to output high-Z ns tPLQZ 150 300 150 tBAD ns Address to /BYTE high or low tAVFL/H 5 5 5 /RP recovery to /CE low ns tPS tPHEL 500 500 500 Symbol Parameter Unit Max Min Max Min Limits M5M29FB/T800-10 M5M29FB/T800-12 Typ Typ Max Min M5M29FB/T800-80 tWC tAVAV Write cycle time ns 100 120 80 tDH tWHDX Data hold time ns tDS tDVWH Data set-up time ns 50 50 50 tAH tWHAX Address hold time ns 10 tAS tAVWH Address set-up time ns 50 50 50 tWP tWLWH Write pulse width ns 60 60 60 tCH tWHEH Chip enable hold time ns tCS tELWL Chip enable set-up time ns 0 0 0 tWPH tWHWL Write pulse width high ns 20 20 20 tPS tPHWL /RP high recovery to write enable low ns 500 500 500 tBLS tBLH Block Lockhold from valid SRD ns 0 0 tQVPH 0 tWHRL tWHRL Write enable high to RY/BY low ns 100 120 80 tDAP tWHRH1 Duration of auto-program operation ms 7.5 120 120 7.5 7.5 120 tDAE tWHRH2 Duration of auto-block erase operation 50 600 50 600 ms 50 600 Typ Block Lock set-up to write enable high ns 100 120 tPHHWH 80 tWPH tBS tFL/HWH Byte enable high or low set-up time ns 50 50 50 tBH tWHFL/H Byte enable high or low hold time ns 100 120 80 tWPS 10 10 10 10 10 0 0 0 |
Similar Part No. - M5M29FB800VP-10 |
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Similar Description - M5M29FB800VP-10 |
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