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M2V56D30TP-10 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part # M2V56D30TP-10
Description  256M Double Data Rate Synchronous DRAM
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

M2V56D30TP-10 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

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Sep.'99 Preliminary
MITSUBISHI LSIs
MITSUBISHI
ELECTRIC
DDR SDRAM (Rev.0.0)
M2S56D20/ 30 TP
256M Double Data Rate Synchronous DRAM
3
Type Designation Code
This rule is applied to only Synchronous DRAM family.
Mitsubishi Main Designation
Speed Grade 10: 125MHz@CL=2.5,100MHz@CL=2.0
75: 133MHz@CL=2.5,100MHz@CL=2.0
Package Type TP: TSOP(II)
Process Generation
Function Reserved for Future Use
Organization 2n 2: x4, 3: x8
DDR Synchronous DRAM
Density 56: 256M bits
Interface V:LVTTL, S:SSTL_3, _2
Memory Style (DRAM)
M 2 S 56 D 3 0
TP -
BLOCK DIAGRAM
/CS /RAS /CAS /WE
DM
Memory
Array
Bank #0
DQ0 - 7
I/O Buffer
Memory
Array
Bank #1
Memory
Array
Bank #2
Memory
Array
Bank #3
Mode Register
Control Circuitry
Address Buffer
A0-12
BA0,1
Clock Buffer
CLK,/CLK
CKE
Control Signal Buffer
/QFC
QFC&QS Buffer
DQS
DLL


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