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SGP20N60 Datasheet(PDF) 2 Page - Infineon Technologies AG

Part # SGP20N60
Description  IGBT Chip in NPT-technology
Download  4 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SGP20N60 Datasheet(HTML) 2 Page - Infineon Technologies AG

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SIGC18T60SNC
Edited by INFINEON Technologies AI PS DD HV3, L 7242-S, Edition 2, 28.11.2003
MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
Collector-emitter voltage, Tj=25 °C
V CE
600
V
DC collector current, limited by Tjmax
I C
1 )
A
Pulsed collector current, tp limited by Tjmax
I cpuls
60
A
Gate emitter voltage
V GE
±20
V
Operating junction and storage temperature
Tj, Tstg
-55 ... +150
°C
1 ) depending on thermal properties of assembly
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Collector-emitter breakdown voltage
V(BR)CES
VGE=0V, IC=500µA
600
Collector-emitter saturation voltage
VCE(sat)
VGE=15V, IC=20A
1.6
1.9
2.5
Gate-emitter threshold voltage
VGE(th)
IC=500µA, VGE=VCE
3
4
5
V
Zero gate voltage collector current
ICES
VCE=600V, VGE=0V
70
µA
Gate-emitter leakage current
IGES
VCE=0V, VGE=20V
120
nA
DYNAMIC CHARACTERISTICS (tested at component):
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Input capacitance
Ciss
-
1100
1320
Output capacitance
Coss
-
107
128
Reverse transfer capacitance
Crss
V CE=25V
V GE=0V
f =1MHz
-
63
75
pF
SWITCHING CHARACTERISTICS (tested at component), Inductive Load:
Value
Parameter
Symbol
Conditions*
min.
typ.
max.
Unit
Turn-on delay time
t d(on)
-
36
46
Rise time
t r
-
30
36
Turn-off delay time
t d(off)
-
250
300
Fall time
t f
Tj=150 ° C
V CC =400V
I C =20A
V GE=+15/0V
RG=16Ω
-
63
76
ns
* switching conditions different to 600V LowLoss, under comparable switching conditions 40% faster turnoff
than LowLoss. Values also influenced by parasitic L- and C- in measurement and package.


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