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M36W0R5020B0ZAQF Datasheet(PDF) 7 Page - STMicroelectronics

Part # M36W0R5020B0ZAQF
Description  32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M36W0R5020B0ZAQF Datasheet(HTML) 7 Page - STMicroelectronics

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M36W0R5020T0, M36W0R5020B0
SRAM Lower Byte Enable (LBS). The
Lower
Byte Enable input enables the lower byte for
SRAM (DQ0-DQ7). LBS is active low.
VDDF Supply Voltage. VDDF provides the power
supply to the internal core of the Flash memory
component. It is the main power supply for all
Flash memory operations (Read, Program and
Erase).
VDDS Supply Voltage. VDDS provides the power
supply to the internal core of the SRAM device. It
is the main power supply for all SRAM operations.
VDDQ Supply Voltage. VDDQ provides the power
supply for the Flash memory and SRAM I/O pins.
This allows all Outputs to be powered indepen-
dently of the Flash memory and SRAM core power
supplies: VDDF and VDDS, respectively.
VPPF Program Supply Voltage. VPPF is a Flash
memory power supply pin. The Supply Voltage
VDDF and the Program Supply Voltage VPP can be
applied in any order. The pin can also be used as
a control input for the Flash memory.
The two functions are selected by the voltage
range applied to the pin. If VPPF is kept in a low
voltage range (0V to VDDQ) VPPF is seen as a con-
trol input. In this case a voltage lower than VPPLK
gives an absolute protection against program or
erase, while VPPF > VPP1 enables these functions
(see Tables 6 and 7, DC Characteristics for the rel-
evant values). VPPF is only sampled at the begin-
ning of a program or erase; a change in its value
after the operation has started does not have any
effect and program or erase operations continue.
If VPPF is in the range of VPPH it acts as a power
supply pin. In this condition VPPF must be stable
until the Program/Erase algorithm is completed.
VSS Ground. VSS is the common ground refer-
ence for all voltage measurements in the Flash
memory (core and I/O Buffers) and SRAM compo-
nents.
Note: Each Flash memory device in a system
should have its supply voltage (VDDF) and the
program supply voltage VPPF decoupled with a
0.1µF ceramic capacitor close to the pin (high
frequency, inherently low inductance capaci-
tors should be as close as possible to the
package). See Figure 7., AC Measurement
Load Circuit. The PCB track widths should be
sufficient to carry the required VPPF program
and erase currents.


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