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M29F040B45N6T Datasheet(PDF) 5 Page - STMicroelectronics |
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M29F040B45N6T Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 21 page 5/21 M29F040B Table 4. Bus Operations Note: X = VIL or VIH. Operation E G W Address Inputs Data Inputs/Outputs Bus Read VIL VIL VIH Cell Address Data Output Bus Write VIL VIH VIL Command Address Data Input Output Disable XVIH VIH XHi-Z Standby VIH XX X Hi-Z Read Manufacturer Code VIL VIL VIH A0 = VIL, A1 = VIL, A9 = VID, Others VIL or VIH 20h Read Device Code VIL VIL VIH A0 = VIH, A1 = VIL, A9 = VID, Others VIL or VIH E2h Automatic Standby. If CMOS levels (VCC ± 0.2V) are used to drive the bus and the bus is inactive for 150ns or more the memory enters Automatic Standby where the internal Supply Current is re- duced to the CMOS Standby Supply Current, ICC3. The Data Inputs/Outputs will still output data if a Bus Read operation is in progress. Special Bus Operations Additional bus operations can be performed to read the Electronic Signature and also to apply and remove Block Protection. These bus opera- tions are intended for use by programming equip- ment and are not usually used in applications. They require VID to be applied to some pins. Electronic Signature. The memory has two codes, the manufacturer code and the device code, that can be read to identify the memory. These codes can be read by applying the signals listed in Table 4, Bus Operations. Block Protection and Blocks Unprotection. Each block can be separately protected against acci- dental Program or Erase. Protected blocks can be unprotected to allow data to be changed. Block Protection and Blocks Unprotection operations must only be performed on programming equip- ment. For further information refer to Application Note AN1122, Applying Protection and Unprotec- tion to M29 Series Flash. |
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