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SI6975DQ Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI6975DQ Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Si6975DQ Vishay Siliconix New Product www.vishay.com 2 Document Number: 71319 S-02318—Rev. A, 23-Oct-00 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = –5 mA –0.45 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA VDS = –9.6 V, VGS = 0 V –1 m Zero Gate Voltage Drain Current IDSS VDS = –9.6 V, VGS = 0 V, TJ = 70_C –25 mA On-State Drain Currenta ID(on) VDS = –5 V, VGS = –4.5 V –20 A VGS = –4.5 V, ID = –5.1 A 0.022 0.027 W Drain-Source On-State Resistancea rDS(on) VGS = –2.5 V, ID = –4.5 A 0.028 0.035 W DS(on) VGS = –1.8 V, ID = –3.9 A 0.037 0.046 W Forward Transconductancea gfs VDS = –5 V, ID = –5.1 A 20 S Diode Forward Voltagea VSD IS = –1.0 A, VGS = 0 V –0.65 –1.1 V Dynamicb Total Gate Charge Qg 23 30 Gate-Source Charge Qgs VDS = –6 V, VGS = –4.5 V, ID = –5.1 A 3.0 nC Gate-Drain Charge Qgd 4.3 Turn-On Delay Time td(on) 25 40 Rise Time tr VDD = –6 V, RL = 6 W 32 50 Turn-Off Delay Time td(off) VDD = –6 V, RL = 6 W ID ^ –1 A, VGEN = –4.5 V, RG = 6 W 96 140 ns Fall Time tf 62 95 Source-Drain Reverse Recovery Time trr IF = –1.0 A, di/dt = 100 A/ms 60 100 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 TC = –55_C 125 _C 25 _C Transfer Characteristics VGS – Gate-to-Source Voltage (V) 0 6 12 18 24 30 0 2468 10 VGS = 5 thru 2.5 V Output Characteristics VDS – Drain-to-Source Voltage (V) 2 V 0.5, 1 V 1.5 V |
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