SI6975DQ datasheet(2/4 Pages) VISHAY

Part #	SI6975DQ

Description	Dual P-Channel 12-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si6975DQ

Vishay Siliconix

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Document Number: 71319

S-02318—Rev. A, 23-Oct-00

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –5 mA

–0.45

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

nA

VDS = –9.6 V, VGS = 0 V

–1

m

Zero Gate Voltage Drain Current

IDSS

VDS = –9.6 V, VGS = 0 V, TJ = 70_C

–25

mA

On-State Drain Currenta

ID(on)

VDS = –5 V, VGS = –4.5 V

–20

A

VGS = –4.5 V, ID = –5.1 A

0.022

0.027

W

Drain-Source On-State Resistancea

rDS(on)

VGS = –2.5 V, ID = –4.5 A

0.028

0.035

W

DS(on)

VGS = –1.8 V, ID = –3.9 A

0.037

0.046

W

Forward Transconductancea

gfs

VDS = –5 V, ID = –5.1 A

20

S

Diode Forward Voltagea

VSD

IS = –1.0 A, VGS = 0 V

–0.65

–1.1

V

Dynamicb

Total Gate Charge

Qg

23

30

Gate-Source Charge

Qgs

VDS = –6 V, VGS = –4.5 V, ID = –5.1 A

3.0

nC

Gate-Drain Charge

Qgd

4.3

Turn-On Delay Time

td(on)

25

40

Rise Time

tr

VDD = –6 V, RL = 6 W

32

50

Turn-Off Delay Time

td(off)

VDD = –6 V, RL = 6 W

ID ^ –1 A, VGEN = –4.5 V, RG = 6 W

96

140

ns

Fall Time

tf

62

95

Source-Drain Reverse Recovery Time

trr

IF = –1.0 A, di/dt = 100 A/ms

60

100

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

6

12

18

24

30

0.0

0.5

1.0

1.5

2.0

2.5

TC = –55_C

125

_C

25

_C

Transfer Characteristics

VGS – Gate-to-Source Voltage (V)

0

6

12

18

24

30

0

2468

10

VGS = 5 thru 2.5 V

Output Characteristics

VDS – Drain-to-Source Voltage (V)

2 V

0.5, 1 V

1.5 V

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