BF1009 datasheet(2/4 Pages) SIEMENS

Part #	BF1009

Description	Silicon N-Channel MOSFET Tetrode

Download	4 Pages

Scroll/Zoom	100%

Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

Logo

2 / 4 page

BF 1009

Semiconductor Group

2

Sep-09-1998

Electrical Characteristics at

TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC characteristics

Drain-source breakdown voltage

ID = 300 µA, -VG1S = 4 V, - VG2S = 4 V

V

-

V(BR)DS

-

16

Gate 1 source breakdown voltage

±

IG1S = 10 mA, VG2S = VDS = 0

-

12

±

V(BR)G1SS

8

Gate 2 source breakdown voltage

±

IG2S = 10 mA, VG1S = 0 V, VDS = 0 V

-

16

9

±

V(BR)G2SS

Gate 1 source current

VG1S = 6 V, VG2S = 0 V

-

µA

60

+

IG1SS

Gate 2 source leakage current

±

VG2S = 8 V, VG1S = 0 V, VDS = 0 V

±

IG2SS

-

nA

50

IDSS

-

500

µA

-

Drain current

VDS = 9 V, VG1S = 0 , VG2S = 6 V

IDSO

8

10

Operating current (selfbiased)

VDS = 9 V, VG2S = 6 V

mA

-

VG2S(p)

-

0.9

-

V

Gate 2-source pinch-off voltage

VDS = 9 V, ID = 100 µA

AC characteristics

Forward transconductance (self biased)

VDS = 9 V, VG2S = 6 V, f = 1 kHz

gfs

-

24

-

mS

Gate 1-input capacitance (self biased)

VDS = 9 V, VG2S = 6 , f = 1 MHz

Cg1ss

-

2.1

2.5

pF

Output capacitance (self biased)

VDS = 9 V, VG2S = 6 , f = 100 MHz

Cdss

-

0.9

-

Power gain (self biased)

VDS = 9 V, VG2S = 6 , f = 800 MHz

Gps

-

22

-

dB

Noise figure (self biased)

VDS = 9 V, VG2S = 6 , f = 800 MHz

F800

-

1.4

-

Gain control range (self biased)

VDS = 9 V, VG2S = 1 V, f = 800 MHz

∆G

ps

40

50

-

Semiconductor Group

2

1998-11-01

Similar Part No. - BF1009

Manufacturer	Part #	Datasheet	Description
Siemens Semiconductor G...	BF1009S	51Kb / 4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)
Infineon Technologies A...	BF1009S	251Kb / 5P	Silicon N-Channel MOSFET Tetrode Feb-18-2004
	BF1009S	84Kb / 8P	Silicon N-Channel MOSFET Tetrode 2007-04-20
	BF1009SR	251Kb / 5P	Silicon N-Channel MOSFET Tetrode Feb-18-2004
	BF1009SR	84Kb / 8P	Silicon N-Channel MOSFET Tetrode 2007-04-20

More results

Similar Description - BF1009

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	BF1009S	251Kb / 5P	Silicon N-Channel MOSFET Tetrode Feb-18-2004
	BF5030W	168Kb / 10P	Silicon N-Channel MOSFET Tetrode 2006-04-13
	BF5030	585Kb / 13P	Silicon N-Channel MOSFET Tetrode 2009-05-05
	BF2030	277Kb / 6P	Silicon N-Channel MOSFET Tetrode Apr-23-2004
	BF1009S	84Kb / 8P	Silicon N-Channel MOSFET Tetrode 2007-04-20
	BF2040	210Kb / 11P	Silicon N-Channel MOSFET Tetrode 2007-06-01
	BF998	249Kb / 6P	Silicon N-Channel MOSFET Tetrode Feb-13-2004
	BF1005	252Kb / 5P	Silicon N-Channel MOSFET Tetrode Feb-18-2004
	BF1005S	252Kb / 5P	Silicon N-Channel MOSFET Tetrode Feb-18-2004
Siemens Semiconductor G...	BF2000	19Kb / 3P	Silicon N Channel MOSFET Tetrode
Infineon Technologies A...	BF1009SW	48Kb / 4P	Silicon N-Channel MOSFET Tetrode Jun-28-2001

More results

BF1009 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

BF1009 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

Similar Part No. - BF1009

Similar Description - BF1009

Html Pages

1 2 3 4

Datasheet Download

Link URL