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NTD4805NT4G Datasheet(PDF) 2 Page - ON Semiconductor |
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NTD4805NT4G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page NTD4805N http://onsemi.com 2 THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case (Drain) RqJC 2.25 °C/W Junction−to−TAB (Drain) RqJC−TAB 3.5 Junction−to−Ambient − Steady State (Note 1) RqJA 67 Junction−to−Ambient − Steady State (Note 2) RqJA 111 1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 27 mV/ °C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 24 V TJ = 25°C 1.0 mA TJ = 125°C 10 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = "20 V "100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.5 2.5 V Negative Threshold Temperature Coefficient VGS(TH)/TJ 5.86 mV/ °C Drain−to−Source On Resistance RDS(on) VGS = 10 to 11.5 V ID = 30 A 4.3 5.0 m W ID = 15 A 4.2 VGS = 4.5 V ID = 30 A 6.0 7.4 ID = 15 A 5.8 Forward Transconductance gFS VDS = 15 V, ID = 15 A 17 S CHARGES AND CAPACITANCES Input Capacitance Ciss VGS = 0 V, f = 1.0 MHz, VDS = 12 V 2865 pF Output Capacitance Coss 610 Reverse Transfer Capacitance Crss 338 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 15 V, ID = 30 A 20.5 26 nC Threshold Gate Charge QG(TH) 4.05 Gate−to−Source Charge QGS 8.28 Gate−to−Drain Charge QGD 8.36 Total Gate Charge QG(TOT) VGS = 11.5 V, VDS = 15 V, ID = 30 A 48 nC SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time td(on) VGS = 4.5 V, VDS = 15 V, ID = 30 A, RG = 3.0 W 18.3 ns Rise Time tr 101.5 Turn−Off Delay Time td(off) 16.3 Fall Time tf 10.6 Turn−On Delay Time td(on) VGS = 11.5 V, VDS = 15 V, ID = 30 A, RG = 3.0 W 8.1 ns Rise Time tr 23.1 Turn−Off Delay Time td(off) 27.1 Fall Time tf 5.7 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. |
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