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SBF50P10-023L Datasheet(PDF) 2 Page - Sensitron

Part No. SBF50P10-023L
Description  RAD TOLERANT LOW RDS HERMETIC POWER MOSFET - P-CHANNEL
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Maker  SENSITRON [Sensitron]
Homepage  http://www.sensitron.com
Logo 

   
 2 page
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•221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798•
• World Wide Web Site - www.sensitron.com • E-Mail Address - sales@sensitron.com •
SENSITRON
TECHNICAL DATA
DATA SHEET 4998, REV. -
Post-Total Dose (up to TID ratings) Irradiation Data
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNITS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = -250µA
BVDSS
-100
-
-
Volts
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = -10V, ID = -20A
VGS = - 4.5V, ID = - 15A
RDS(ON)
-
0.019
0.021
0.023
0.025
GATE THRESHOLD VOLTAGE
VDS = VGS, ID = -250µA
VGS(th)
-1
-
-3
Volts
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 0.8 x Max. rating, VGS = 0V, TJ = 25°C
IDSS
-
-
-1
µA
GATE TO SOURCE LEAKAGE FORWARD
VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE
VGS = -20V
IGSS
-
-
100
-100
nA
DIODE FORWARD VOLTAGE
IF = -20A, VGS = 0V
Pulse test, t
≤ 300 µs, duty cycle d ≤ 2 %
VSD
-
- 1.0
-1.5
Volts
Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
(MeVcm
2/mg)
Energy
(MeV)
Range
(
µm)
VGS=0V
VGS= 5V
VGS= 10V VGS= 15V
VGS= 20V
Br
37.47
278
36.1
-100
-100
-100
-100
-100
I
59.72
320
31.1
-100
-100
-100
-100
-100
SEE Safe Operation Area
-120
-100
-80
-60
-40
-20
0
0
5
10
15
20
VGS (V)
Br
I
SBF50P10-023L




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