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SBF50P10-023L Datasheet(PDF) 1 Page - Sensitron

Part No. SBF50P10-023L
Description  RAD TOLERANT LOW RDS HERMETIC POWER MOSFET - P-CHANNEL
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Maker  SENSITRON [Sensitron]
Homepage  http://www.sensitron.com
Logo 

   
 1 page
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•221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798•
• World Wide Web Site - www.sensitron.com • E-Mail Address - sales@sensitron.com •
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4998, REV. -
RAD TOLERANT LOW RDS HERMETIC
POWER MOSFET - P-CHANNEL
FEATURES:
100 Volt, 0.023 Ohm, 90A MOSFET (current limited to 50A by package)
Characterized for V
GS of 4.5V for Logic Level Drive
Total Dose Characterized to 300 Krad
Single Event Effect Capability Characterized to 60 MeVcm2/mg LET
Isolated Hermetic Metal Package; Ultra Low R
DS (on)
Ceramic Seals with Glidcop leads
Also available with glass seals and copper core alloy 52 leads
MAXIMUM RATINGS
ALL RATINGS ARE AT T
C
= 25
°C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MIN.
TYP.
MAX.
UNITS
GATE TO SOURCE VOLTAGE
VGS
-
-
±20
Volts
ON-STATE DRAIN CURRENT
ID25
-
-
- 50
Amps
PULSED DRAIN CURRENT
IDM
-
-
- 90
Amps
OPERATING AND STORAGE TEMPERATURE
TJ/TSTG
-55
-
+150
°C
TOTAL DEVICE DISSIPATION
PD
-
-
225
Watts
THERMAL RESISTANCE, JUNCTION TO CASE
RθJC
-
-
0.55
°C/W
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNITS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = - 250µA
BVDSS
-100
-
-
Volts
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = - 10V, ID = - 20A
VGS = - 4.5V, ID = - 15A
RDS(ON)
-
-
0.019
0.021
0.023
0.025
GATE THRESHOLD VOLTAGE VDS = VGS, ID = - 250µA
VGS(th)
- 1
-
- 3
Volts
FORWARD TRANSCONDUCTANCE
VDS = - 15V, ID = - 20A
gfs
-
80
-
S(1/
Ω)
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 0.8 x Max. rating, VGS = 0V, TJ = 25°C
TJ = 125°C
IDSS
-
-
- 1
- 500
µA
GATE TO SOURCE LEAKAGE FORWARD
VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE
VGS = -20V
IGSS
-
-
100
-100
nA
TURN ON DELAY TIME
VDD = - 50V
RISE TIME
ID = - 50A
TURN OFF DELAY TIME
VGS= - 10V
FALL TIME
RG = 1Ω
td(ON)
tr
td(OFF)
tf
-
20
510
145
870
30
855
220
1300
nsec
DIODE FORWARD VOLTAGE
IF = - 20A, VGS = 0V
Pulse test, t
≤ 300 µs, duty cycle d ≤ 2 %
VSD
-
- 1.0
- 1.5
Volts
REVERSE RECOVERY TIME
TJ = 25°C,
IF= - 20A, VR = - 50V
di/dt = - 100A/
µsec
trr
-
80
120
nsec
INPUT CAPACITANCE
VGS = 0 V,
OUTPUT CAPACITANCE
VDS = - 50 V,
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
Ciss
Coss
Crss
-
11100
700
1700
-
pF
SBF50P10-023L




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