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IL4108 Datasheet(PDF) 3 Page - Vishay Siliconix

Part # IL4108
Description  Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Low Input Current
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IL4108 Datasheet(HTML) 3 Page - Vishay Siliconix

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IL410/ IL4108
Document Number 83627
Rev. 1.4, 26-Apr-04
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Comparative tracking index per
DIN IEC 112/VDE 0303 part 1,
group IIIa per DIN VDE 6110
≥ 175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Storage temperature range
Tstg
- 55 to + 150
°C
Ambient temperature range
Tamb
- 55 to + 100
°C
Soldering temperature
max.
≤ 10 sec. dip soldering
≥ 0.5 mm from case bottom
Tsld
260
°C
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = 10 mA
VF
1.16
1.35
V
Reverse current
VR = 6.0 V
IR
0.1
10
µA
Input capacitance
VF = 0 V, f = 1.0 MHz
CIN
25
pF
Thermal resistance, junction to
ambient
Rthja
750
°C/W
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Off-state voltage
ID(RMS) = 70 µA
IL410
VD(RMS)
424
460
V
IL4108
VD(RMS)
565
V
Repetitive peak off-state voltage IDRM = 100 µA
IL410
VDRM
600
V
IL4108
VDRM
800
V
Off-state current
VD = VDRM, Tamb = 100 °C,
IF = 0 mA
ID(RMS)1
10
100
µA
VD = VDRM, IF = Rated IFT
ID(RMS)2
200
µA
On-state voltage
IT = 300 mA
VTM
1.7
3.0
V
On-state current
PF = 1.0, VT(RMS) = 1.7 V
ITM
300
mA
Surge (non-repetitive), on-state
current
f = 50 Hz
ITSM
3.0
A
Trigger current 1
VD = 5.0 V
IFT1
2.0
mA
Trigger current 2
VOP = 220 V, f = 50 Hz,
TJ = 100 °C, tpF > 10 ms
IFT2
6.0
mA
Trigger current temp. gradient
∆I
FT1/∆Tj
7.0
14
µA/°C
∆I
FT2/∆Tj
7.0
14
µA/°C
Inhibit voltage temp. gradient
∆V
DINH/∆Tj
-20
mV/°C
Off-state current in inhibit state
IF = IFT1, VDRM
IDINH
50
200
µA
Holding current
IH
65
500
µA
Latching current
VT = 2.2 V
IL
5.0
mA
Zero cross inhibit voltage
IF = Rated IFT
VIH
15
25
V
Turn-on time
VRM = VDM = VD(RMS)
ton
35
µs
Turn-off time
PF = 1.0, IT = 300 mA
toff
50
µs
Parameter
Test condition
Symbol
Value
Unit


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