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HM628511HCI Datasheet(PDF) 9 Page - Renesas Technology Corp

Part # HM628511HCI
Description  Wide Temperature Range Version 4M High Speed SRAM (512-kword8-bit)
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HM628511HCI Datasheet(HTML) 9 Page - Renesas Technology Corp

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HM628511HCI Series
Rev. 1, Nov. 2001, page 7 of 7
Write Cycle
HM628511HCI
-12
Parameter
Symbol
Min
Max
Unit
Notes
Write cycle time
t
WC
12
ns
Address valid to end of write
t
AW
8
ns
Chip select to end of write
t
CW
8
ns
9
Write pulse width
t
WP
8
ns
8
Address setup time
t
AS
0
ns
6
Write recovery time
t
WR
0
ns
7
Data to write time overlap
t
DW
6
ns
Data hold from write time
t
DH
0
ns
Write disable to output in low-Z
t
OW
3
ns
1
Output disable to output in high-Z
t
OHZ
6
ns
1
Write enable to output in high-Z
t
WHZ
6
ns
1
Notes: 1. Transition is measured
±200 mV from steady voltage with output load (B). This parameter is
sampled and not 100% tested.
2. Address should be valid prior to or coincident with
CS transition low.
3.
WE and/or CS must be high during address transition time.
4. If
CS and OE are low during this period, I/O pins are in the output state. Then, the data input
signals of opposite phase to the outputs must not be applied to them.
5. If the
CS low transition occurs simultaneously with the WE low transition or after the WE
transition, output remains a high impedance state.
6. t
AS is measured from the latest address transition to the later of CS or WE going low.
7. t
WR is measured from the earlier of CS or WE going high to the first address transition.
8. A write occurs during the overlap of a low
CS and a low WE. A write begins at the latest
transition among
CS going low and WE going low. A write ends at the earliest transition among
CS going high and WE going high. t
WP is measured from the beginning of write to the end of
write.
9. t
CW is measured from the later of CS going low to the end of write.


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