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MRF9080LSR3 Datasheet(PDF) 2 Page - Freescale Semiconductor, Inc |
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MRF9080LSR3 Datasheet(HTML) 2 Page - Freescale Semiconductor, Inc |
2 / 12 page 5−2 Freescale Semiconductor Wireless RF Product Device Data MRF9080LR3 MRF9080LSR3 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vds, VGS = 0) IDSS — — 1 µAdc Gate−Source Leakage Current (VGS = 5 Vdc, VDS = 0 ) IGSS — — 1 µAdc On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 µAdc) VGS(th) 2.0 — 4.0 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) VGS(Q) — 3.7 — Vdc Drain−Source On−Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.19 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) gfs — 8.0 — S Dynamic Characteristics (1) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Coss — 73 — pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss — 2.9 — pF Functional Tests (In Freescale Test Fixture, 50 ohm system) (2) Power Output, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) P1dB 68 75 — W Common−Source Amplifier Power Gain @ 70 W (Min) (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) Gps 17 18.5 20 dB Drain Efficiency @ Pout = 70 W (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) η1 47 52 — % Drain Efficiency @ P1dB (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) η2 — 55 — % Input Return Loss (VDD = 26 Vdc, Pout = 70 W, IDQ = 600 mA, f = 921 and 960 MHz) IRL 9.5 12.5 — dB Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 600 mA, f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test 1. Part is internally input matched. 2. To meet application requirements, Freescale test fixtures are designed to cover full GSM 900 band ensuring batch to batch consistency |
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Similar Description - MRF9080LSR3 |
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