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BUK9207-30B Datasheet(PDF) 1 Page - NXP Semiconductors |
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BUK9207-30B Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 12 page BUK9207-30B TrenchMOS™ logic level FET Rev. 02 — 12 December 2003 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information [1] It is not possible to make connection to pin 2 of the SOT428 package. s Very low on-state resistance s Q101 compliant s 185 °C rated s Logic level compatible. s Automotive systems s 12 V loads s Motors, lamps and solenoids s General purpose power switching. s EDS(AL)S ≤ 329 mJ s RDSon = 5.9 mΩ (typ) s ID ≤ 75 A s Ptot ≤ 167 W. Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) SOT428 (D-PAK) 2 drain (d) [1] 3 source (s) mb mounting base; connected to drain (d) MBK091 Top view 13 mb 2 s d g MBB076 |
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