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NTF3055-100 Datasheet(PDF) 1 Page - ON Semiconductor |
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NTF3055-100 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page Publication Order Number: NTF3055−100/D © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 3 1 NTF3055−100 Preferred Device Power MOSFET 3.0 Amps, 60 Volts N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 60 Vdc Drain−to−Gate Voltage (RGS = 10 MW) VDGR 60 Vdc Gate−to−Source Voltage − Continuous − Non−repetitive (tp ≤ 10 ms) VGS ± 20 ± 30 Vdc Vpk Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tp ≤ 10 ms) ID ID IDM 3.0 1.4 9.0 Adc Apk Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Derate above 25°C PD 2.1 1.3 0.014 W W W/°C Operating and Storage Temperature Range TJ, Tstg −55 to 175 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc) EAS 74 mJ Thermal Resistance − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) RqJA RqJA 72.3 114 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1″ pad size, 1 oz. (Cu. Area 1.127 sq in). 2. When surface mounted to an FR4 board using minimum recommended pad size, 2−2.4 oz. (Cu. Area 0.272 sq in). D G S 1 2 3 4 3.0 A, 60 V RDS(on) = 110 mW N−Channel Device Package Shipping† ORDERING INFORMATION NTF3055−100T1 SOT−223 1000/Tape & Reel SOT−223 CASE 318E STYLE 3 MARKING DIAGRAM & PIN ASSIGNMENT NTF3055−100T3 SOT−223 4000/Tape & Reel NTF3055−100T3LF SOT−223 4000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. http://onsemi.com NTF3055−100T3G SOT−223 (Pb−Free) 4000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3055 G G A = Assembly Location WW = Work Week 3055 = Specific Device Code G = Pb−Free Package AWW 1 Gate 2 Drain 3 Source Drain 4 (Note: Microdot may be in either location) SOT−223 (Pb−Free) NTF3055−100T1G 1000/Tape & Reel |
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