NTF3055-100 datasheet(1/6 Pages) ONSEMI

Part #	NTF3055-100

Description	Power MOSFET 3.0 Amps 60 Volts N?묬hannel

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Manufacturer	ONSEMI [ON Semiconductor]

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Publication Order Number:

NTF3055−100/D

February, 2006 − Rev. 3

1

NTF3055−100

Preferred Device

Power MOSFET

3.0 Amps, 60 Volts

N−Channel SOT−223

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

Features

• Pb−Free Packages are Available

Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

60

Vdc

Drain−to−Gate Voltage (RGS = 10 MW)

VDGR

60

Vdc

Gate−to−Source Voltage

− Continuous

− Non−repetitive (tp ≤ 10 ms)

VGS

± 20

± 30

Vdc

Vpk

Drain Current

− Continuous @ TA = 25°C

− Continuous @ TA = 100°C

− Single Pulse (tp ≤ 10 ms)

ID

IDM

3.0

1.4

9.0

Adc

Apk

Total Power Dissipation @ TA = 25°C (Note 1)

Total Power Dissipation @ TA = 25°C (Note 2)

Derate above 25°C

PD

2.1

1.3

0.014

W

W/°C

Operating and Storage Temperature Range

TJ, Tstg

−55

to 175

°C

Single Pulse Drain−to−Source Avalanche

Energy − Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 10 Vdc,

IL(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc)

EAS

74

mJ

Thermal Resistance

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

RqJA

72.3

114

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

TL

260

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

1. When surface mounted to an FR4 board using 1″ pad size, 1 oz.

(Cu. Area 1.127 sq in).

2. When surface mounted to an FR4 board using minimum recommended pad

size, 2−2.4 oz. (Cu. Area 0.272 sq in).

D

G

S

1

2

3

4

3.0 A, 60 V

RDS(on) = 110 mW

N−Channel

Device

Package

Shipping†

ORDERING INFORMATION

NTF3055−100T1

SOT−223 1000/Tape & Reel

SOT−223

CASE 318E

STYLE 3

MARKING

DIAGRAM

& PIN

ASSIGNMENT

NTF3055−100T3

SOT−223 4000/Tape & Reel

NTF3055−100T3LF SOT−223 4000/Tape & Reel

Preferred devices are recommended choices for future use

and best overall value.

http://onsemi.com

NTF3055−100T3G

SOT−223

(Pb−Free)

4000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

3055 G

G

A

= Assembly Location

WW

= Work Week

3055

= Specific Device Code

G

= Pb−Free Package

AWW

1

Gate

2

Drain

3

Source

Drain

4

(Note: Microdot may be in either location)

SOT−223

(Pb−Free)

NTF3055−100T1G

1000/Tape & Reel

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