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K8S6415ETB-DE7C Datasheet(PDF) 11 Page - Samsung semiconductor

Part # K8S6415ETB-DE7C
Description  64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K8S6415ETB-DE7C Datasheet(HTML) 11 Page - Samsung semiconductor

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FLASH MEMORY
K8S6415ET(B)B
Revision 1.1
January, 2006
11
DEVICE OPERATION
The device has I/Os that accept both address and data information. To write a command or command sequence (which includes pro-
gramming data to the device and erasing blocks of memory), the system must drive CLK, AVD and CE to VIL and OE to VIH when
providing an address to the device, and drive CLK, WE and CE to VIL and OE to VIH when writing commands or data.
The device provide the unlock bypass mode to save its program time for program operation. Unlike the standard program command
sequence which is comprised of four bus cycles, only two program cycles are required to program a word in the unlock bypass
mode. One block, multiple blocks, or the entire device can be erased. Table 3 indicates the address space that each block occupies.
The device’s address space is divided into sixteen banks: Bank 0 contains the boot/parameter blocks, and the other banks(from Bank
1 to 15) consist of uniform blocks. A “bank address” is the address bits required to uniquely select a bank. Similarly, a “block address”
is the address bits required to uniquely select a block. ICC2 in the DC Characteristics table represents the active current specification
for the write mode. The AC Characteristics section contains timing specification tables and timing diagrams for write operations.
Read Mode
The device automatically enters to asynchronous read mode after device power-up. No commands are required to retrieve data in
asynchronous mode. After completing an Internal Program/Erase Routine, each bank is ready to read array data. The reset com-
mand is required to return a bank to the read(or erase-suspend-read)mode if DQ5 goes high during an active program/erase opera-
tion, or if the bank is in the autoselect mode.
The synchronous(burst) mode will automatically be enabled on the first rising edge on the CLK input while AVD is held low. That
means device enters burst read mode from asynchronous read mode to burst read mode using CLK and AVD signal. When the burst
read is finished(or terminated), the device return to asynchronous read mode automatically.
Asynchronous Read Mode
For the asynchronous read mode a valid address should be asserted on A/DQ0-A/DQ15 and A16-A21, while driving AVD and CE to
VIL. WE should remain at VIH . Note that CLK must remain low for asynchronous read mode. The address is latched at the rising
edge of AVD, and then the system can drive OE to VIL. The data will appear on A/DQ0-A/DQ15. Since the memory array is divided
into sixteen banks, each bank remains enabled for read access until the command register contents are altered.
Address access time (tAA) is equal to the delay from valid addresses to valid output data. The chip enable access time(tCE) is the
delay from the falling edge of CE to valid data at the outputs. The output enable access time(tOE) is the delay from the falling edge of
OE to valid data at the output. The asynchronous access time is measured from a valid address, falling edge of AVD or falling edge
of CE whichever occurs last. To prevent the memory content from spurious altering during power transition, the initial state machine
is set for reading array data upon device power-up, or after a hardware reset.
Synchronous (Burst) Read Mode
The device is capable of continuous linear burst operation and linear burst operation of a preset length. For the burst mode, the sys-
tem should determine how many clock cycles are desired for the initial word(tIAA) of each burst access and what mode of burst oper-
ation is desired using "Burst Mode Configuration Register" command sequences. See "Set Burst Mode Configuration" for further
details. The status data also can be read during burst read mode by using AVD signal with a bank address. To initiate the synchro-
nous read again, a new address and AVD pulse is needed after the host has completed status reads or the device has completed
the program or erase operation.
Continuous Linear Burst Read
The synchronous(burst) mode will automatically be enabled on the first rising edge on the CLK input while AVD is held low. Note that
the device is enabled for asynchronous mode when it first powers up. The initial word is output tIAA after the rising edge of the first
CLK cycle. Subsequent words are output tBA after the rising edge of each successive clock cycle, which automatically increments the
internal address counter. Note that the device has internal address boundary that occurs every 16 words. When the device is cross-
ing the first word boundary, additional clock cycles are needed before data appears for the next address. The number of addtional
clock cycle can vary from zero to three cycles, and the exact number of additional clock cycle depends on the starting address of
burst read.(Refer to Figure 13) The RDY output indicates this condition to the system by pulsing low. The device will continue to out-
put sequential burst data, wrapping around to address 000000h after it reaches the highest addressable memory location until the
system asserts CE high, RESET low or AVD low in conjunction with a new address.(See Table 4.) The reset command does not ter-
minate the burst read operation.
If the host system crosses the bank boundary while reading in burst mode, and the accessed bank is not programming or erasing, a
additional clock cycles are needed as previously mentioned. If the host system crosses the bank boundary while the accessed bank
is programming or erasing, that is busy bank, the synchronous read will be terminated.


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