HY57V281620HCT-S datasheet(9/13 Pages) HYNIX

Part #	HY57V281620HCT-S

Description	4 Banks x 2M x 16bits Synchronous DRAM

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Manufacturer	HYNIX [Hynix Semiconductor]

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HY57V281620HC(L)T

Rev. 0.2/Aug. 01

10

IBIS SPECIFICATION

IOH Characteristics (Pull-up)

IOL Characteristics (Pull-down)

Voltage

100MHz

(Min)

100MHz

(Max)

66MHz

(Min)

(V)

I(mA)

3.45

-2.4

3.3

-27.3

3.0

0

-74.1

-0.7

2.6

-21.1

-129.2

-7.5

2.4

-34.1

-153.3

-13.3

2.0

-58.7

-197

-27.5

1.8

-67.3

-226.2

-35.5

1.65

-73

-248

-41.1

1.5

-77.9

-269.7

-47.9

1.4

-80.8

-284.3

-52.4

1.0

-88.6

-344.5

-72.5

0

-93

-502.4

-93

Voltage

100MHz

(Min)

100MHz

(Max)

66MHz

(Min)

(V)

I(mA)

0

0.4

27.5

70.2

17.7

0.65

41.8

107.5

26.9

0.85

51.6

133.8

33.3

1.0

58.0

151.2

37.6

1.4

70.7

187.7

46.6

1.5

72.9

194.4

48.0

1.65

75.4

202.5

49.5

1.8

77.0

208.6

50.7

1.95

77.6

212.0

51.5

3.0

80.3

219.6

54.2

3.45

81.4

222.6

54.9

-600

-500

-400

-300

-200

-100

0

0.5

1

1.5

2

2.5

3

3.5

Voltage (V)

IOH Min (66MHz)

66MHz and 100MHz Pull-up

IOH Min (100MHz)

IOH Max (66 /100MHz)

0

50

100

150

200

250

0

0.5

1

1.5

2

2.5

3

3.5

Voltage (V)

66MHz and 100MHz Pull-down

IOL Min (100MHz)

IOL Min (66MHz)

IOL Max (100MHz)

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