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WV3EG265M72EFSU262D4M Datasheet(PDF) 4 Page - White Electronic Designs Corporation |
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WV3EG265M72EFSU262D4M Datasheet(HTML) 4 Page - White Electronic Designs Corporation |
4 / 11 page WV3EG265M72EFSU-D4 4 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs May 2006 Rev. 0 ADVANCED DC ELECTRICAL CHARACTERISTICS PARAMETER/CONDITION SYMBOL MIN MAX UNITS Notes Supply Voltage DRR266/DDR333 (nominal VCC 2.5V) VCC 2.3 2.7 V I/O Supply Voltage DRR266/DDR333 (nominal VCC 2.5V VCCQ 2.3 2.7 V I/O Reference Voltage VREF 0.49 × VCC 0.51 × VCC V1 I/O Termination Voltage VTT VREF - 0.04 VREF + 0.04 V 2 Input Logic High Voltage VIH(DC) VREF + 0.15 VCC + 0.30 V Input Logic Low Voltage VIL(DC) -0.3 VREF - 0.15 V Input voltage level, CK and CK# VIN(DC) -0.3 VREF + 0.30 V Input differential voltage, CK and CK# VID(DC) 0.3 VREF + 0.60 V 3 Input crossing point voltage, CK and CK# VIX(DC) 0.3 VREF - 0.60 V Input leakage current Addr CAS#, RAS#, WE# II -36 36 µA CS#, CKE -18 18 µA CK, CK# -10 10 µA DM -4 4 µA Output leakage current IOZ -10 10 µA Output high current (normal strength) VOUT = v +0.84V IOH -16.8 mA Output high current (normal strength) VOUT = VTT - 0.84V IOL 16.8 mA Output high current (half strength) VOUT = VTT - 0.45V IOH -9 mA Output high current (half strength) VOUT = VTT - 0.45V IOL 9mA Notes: 1 VREF is expected to equal to 0.5*VCCQ of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise on VREF may not exceed +/-2 percent of the DC value. 2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF and must track variations in the DC level of VREF. 3. VID is the magnitude of the difference between the input level on CK and the input level of CK#. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Units VIN, VOUT Voltage on VCC pin relative to VSS -0.5 ~ 3.6 V VCC, VCCQ Voltage on VCC & VCCQ supply relative to VSS -1.0 ~ 3.6 V VREF Voltage of VREF supply relative to VSS -1.0 ~ 3.6 V TSTG Storage Temperature -55 ~ +150 °C TA Operating temperature 0 ~ 70 °C PD Power dissipation 18 W IOS Short circuit output current 50 mA Notes: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceed. Functional ioeration should be restricted to recommended operation conditions. Exposing to higher than recommended voltage for extended periods of time could affect device reliability. |
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