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WV3EG6437S335D4MG Datasheet(PDF) 6 Page - White Electronic Designs Corporation |
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WV3EG6437S335D4MG Datasheet(HTML) 6 Page - White Electronic Designs Corporation |
6 / 11 page 6 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs June 2006 Rev. 0 White Electronic Designs Corp. reserves the right to change products or specifications without notice. ADVANCED WV3EG6437S-D4 ICC SPECIFICATIONS AND TEST CONDITIONS Parameter Symbol Conditions DDR403 @CL=3 Max DDR333 @CL=2.5 Max Units Operating Current ICC0* One device bank; Active - Precharge; tRC=tRC(MIN); tCK=tCK(MIN); DQ,DM and DQS inputs changing once per clock cycle; Address and control inputs changing once every two cycles. 456 372 mA Operating Current ICC1* One device bank; Active-Read-Precharge; Burst = 2; tRC=tRC(MIN);tCK=tCK(MIN) ; Iout = 0mA; Address and control inputs changing once per clock cycle. 616 512 mA Precharge Power- Down Standby Current ICC2P** All device banks idle; Power- down mode; tCK=tCK(MIN); CKE=(low) 32 24 mA Idle Standby Current ICC2F** CS# = High; All device banks idle; tCK=tCK(MIN); CKE = high; Address and other control inputs changing once per clock cycle. Vin = Vref for DQ, DQS and DM. 240 240 mA Active Power-Down Standby Current ICC3P** One device bank active; Power-down mode; tCK(MIN); CKE=(low) 400 280 mA Active Standby Current ICC3N** CS# = High; CKE = High; One device bank; Active-Precharge; tRC=tRAS(MAX); tCK=tCK(MIN); DQ, DM and DQS inputs changing twice per clock cycle; Address and other control inputs changing once per clock cycle. 520 440 mA Operating Current ICC4R* Burst = 2; Reads; Continous burst; One device bank active;Address and control inputs changing once per clock cycle; tCK=tCK(MIN); Iout = 0mA. 736 652 mA Operating Current ICC4W** Burst = 2; Writes; Continous burst; One device bank active; Address and control inputs changing once per clock cycle; tCK=tCK(MIN); DQ,DM and DQS inputs changing twice per clock cycle. 736 652 mA Auto Refresh Current ICC5** tRC=tRC(MIN) 1,600 1,440 mA Self Refresh Current ICC6** CKE ≤ 0.2V 24 24 mA Operating Current ICC7* Four bank interleaving Reads (BL=4) with auto precharge with tRC=tRC (MIN); tCK=tCK(MIN); Address and control inputs change only during Active Read or Write commands. 1,416 1,332 mA Note: ICC specification is based on SAMSUNG components. Other DRAM Manufacturers specification may be different. * Value calculated as one module rank in this operation condition, and all other module ranks in ICC2P (CKE LOW) mode. ** Value calculated reflects all module ranks in the operating condition. |
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