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White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

White Electronic Designs

WV3EG232M64STSU-D4

September 2005

Rev. 1

PRELIMINARY

White Electronic Designs Corp. reserves the right to change products or specifications without notice.

DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND

RECOMMENDED AC OPERATING CONDITIONS

Parameter

Symbol

335

Unit

Min

Max

Row Cycle Time

60

ns

Refresh row cycle time

72

ns

Row active

42

120K

ns

RAS# to CAS# delay

18

ns

Row precharge time

18

ns

Row active to row active delay

12

ns

Write recovery time

15

ns

Last data into Read command

Clock cycle time

CL=2.5

612

ns

Clock high level width

0.45

0.55

Clock low level width

0.55

0.55

DQS-out access time from CK/CK#

-0.6

+0.6

ns

Output data access time from CK/CK#

-0.7

+0.7

ns

Data strobe edge to output data edge

-

0.45

ns

Read Preamble

0.9

1.1

Read Postamble

0.4

0.6

CK to valid DQS-in

0.75

1.25

DQS-in setup time

0ns

DQS-in hold time

0.25

DQS falling edge to CK rising-setup time

0.2

DQS falling edge to CK rising-hold time

0.2

DQS-in high level width

0.35

DQS-in low level width

0.35

Address and control input setup time (fast)

0.75

ns

Address and control input hold time (fast)

0.75

ns

Address and control input setup (slow)

0.7

ns

Address and control input hold time (slow)

0.7

ns

Data-out high impedence time from CK/CK#

-0.7

+0.7

ns

Data-out low impedence time from CK/CK#

-0.7

+0.7

ns

Mode register set cycle time

10

ns

DQ & DM setup time to DQS

0.4

ns

DQ & DM hold time to DQS

0.4

ns

Control & address input pulse width

2.2

ns

DQ & DM input pulse width

1.75

ns

Exit self refresh to non-Read command

75

ns

Exit self refresh to Read command

200

Refresh interval time

7.8

us

Output DQS valid window

—ns

Clock half period

—

ns

Data hold skew factor

0.55

ns

DQS write postamble

0.4

0.6

ns

Active Read with auto precharge command

18

ns

Auto precharge write recovery + Precharge time

NOTE:

AC Timing Parameters are based on SAMSUNG components. Other DRAM Manufacturers parameters may be different.