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White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

White Electronic Designs

WE128K32-XXX

March 2006

Rev. 10

White Electronic Designs Corp. reserves the right to change products or specifications without notice.

PAGE WRITE OPERATION

The WE128K32-XXX has a page write operation that

allows one to 128 bytes of data to be written into the device

and consecutively loads during the internal programming

period. Successive bytes may be loaded in the same

manner after the first data byte has been loaded. An

internal timer begins a time out operation at each write

cycle. If another write cycle is completed within 150µs

or less, a new time out period begins. Each write cycle

restarts the delay period. The write cycles can be continued

as long as the interval is less than the time out period.

The usual procedure is to increment the least significant

address lines from A0 through A6 at each write cycle. In

this manner a page of up to 128 bytes can be loaded in

to the EEPROM in a burst mode before beginning the

relatively long interval programming cycle.

After the 150µs time out is completed, the EEPROM

begins an internal write cycle. During this cycle the entire

page of bytes will be written at the same time. The internal

programming cycle is the same regardless of the number

of bytes accessed.

FIGURE 9 – PAGE MODE WRITE WAVEFORMS

PAGE WRITE CHARACTERISTICS

Page Mode Write Characteristics

Symbol

Unit

Parameter

Min

Max

Write Cycle Time, TYP = 6ms

10

ms

Address Set-up Time

0ns

Address Hold Time (1)

100

ns

Data Set-up Time

50

ns

Data Hold Time

10

ns

Write Pulse Width

100

ns

Byte Load Cycle Time

150

µs

Write Pulse Width High

50

ns

1. Page address must remain valid for duration of write cycle.

OE#

CS#

WE#

ADDRESS

DATA