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W3EG64M64ETSU403D4SG Datasheet(PDF) 6 Page - White Electronic Designs Corporation |
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W3EG64M64ETSU403D4SG Datasheet(HTML) 6 Page - White Electronic Designs Corporation |
6 / 12 page WV3EG64M64ETSU-D4 6 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs March 2006 Rev. 0 PRELIMINARY ICC SPECIFICATIONS AND CONDITIONS 0°C ≤ TA ≤ +70°C DDR400: VCC = VCCQ = +2.6V ±0.1V Symbol Parameter/Condition Max Max Units DDR400 @CL=3 DDR333 @CL=2.5 ICC0 OPERATING CURRENT: One device bank; Active-Precharge; tRC = tRC (MIN); tCK = tCK (MIN); DQ, DM and DQS inputs changing once per clock cycle; Address and control inputs changing once every two clock cycles 960 840 mA ICC1 OPERATING CURRENT: One device bank; Active-Read-Precharge; Burst = 4; tRC = tRC (MIN); tCK = tCK (MIN); IOUT = 0mA; Address and control inputs changing once per clock cycle 1,200 1,080 mA ICC2P PRECHARGE POWER-DOWN STANDBY CURRENT: All device banks idle; Power-down mode; tCK = tCK (MIN); CKE = (LOW) 40 40 mA ICC2F IDLE STANDBY CURRENT: CS# = HIGH; All device banks are idle; tCK = tCK (MIN); CKE = HIGH; Address and other control inputs changing once per clock cycle. VIN = VREF for DQ, DQS, and DM 240 240 mA ICC3P ACTIVE POWER-DOWN STANDBY CURRENT: One device bank active; Power-down mode; tCK = tCK (MIN); CKE = LOW 360 200 mA ICC3N ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One device bank active; tRC = tRAS (MAX); tCK = tCK (MIN); DQ, DM and DQS inputs changing twice per clock cycle; Address and other control inputs changing once per clock cycle 480 360 mA ICC4R OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One device bank active; Address and control inputs changing once per clock cycle; tCK = tCK (MIN); IOUT = 0mA 1,240 1,120 mA ICC4W OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One device bank active; Address and control inputs changing once per clock cycle; tCK = tCK (MIN); DQ, DM, and DQS inputs changing twice per clock cycle 1,400 1,200 mA ICC5 AUTO REFRESH BURST CURRENT: tREFC = tRFC (MIN) 1,760 1,640 mA ICC6 SELF REFRESH CURRENT: CKE ≤ 0.2V 40 40 mA ICC7 OPERATING CURRENT: Four device bank interleaving READs (Burst = 4) with auto precharge, tRC = minimum tRC allowed; tCK = tCK (MIN); Address and control inputs change only during Active READ, or WRITE commands 3,080 2,880 mA Notes: ICC parameters are based on SAMSUNG components. Other DRAM manufactures parameter may be different |
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