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White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

White Electronic Designs

WSF128K32-XH2X

October 2004

Rev. 4

White Electronic Designs Corp. reserves the right to change products or specifications without notice.

PRELIMINARY

DC CHARACTERISTICS

Parameter

Symbol

Conditions

Min

Max

Unit

Input Leakage Current

10

µA

Output Leakage Current

10

µA

SRAM Operating Supply Current x 32 Mode

670

mA

Standby Current

80

mA

SRAM Output Low Voltage

0.4

V

SRAM Output High Voltage

2.4

V

220

mA

Erase (2)

280

mA

Flash Output Low Voltage

0.45

V

Flash Output High Voltage

V

Flash Output High Voltage

V

3.2

V

NOTES:

SRAM TRUTH TABLE

SCS#

OE#

SWE#

Mode

Data I/O

Power

H

X

X

Standby

High Z

Standby

L

L

H

Read

Data Out

Active

L

H

H

Read

High Z

Active

L

X

L

Write

Data In

Active

NOTE:

1. FCS# must remain high when SCS# is low.

CAPACITANCE

Ta = +25°C

Parameter

Symbol

Conditions

Max Unit

OE# capacitance

80

pF

30

pF

F/S CS# capacitance

50

pF

30

pF

80

pF

This parameter is guaranteed by design but not tested.

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Min

Max

Unit

Operating Temperature

-55

+125

°C

Storage Temperature

-65

+150

°C

Signal Voltage Relative to GND

-0.5

7.0

V

Junction Temperature

150

°C

Supply Voltage

-0.5

7.0

V

Parameter

Flash Data Retention

10 years

Flash Endurance (write/erase cycles)

10,000

NOTE:

1. Stresses above the absolute maximum rating may cause permanent damage to the

device. Extended operation at the maximum levels may degrade performance and

affect reliability.

RECOMMENDED OPERATING CONDITIONS

Parameter

Symbol

Min

Max

Unit

Supply Voltage

4.5

5.5

V

Input High Voltage

2.2

V

Input Low Voltage

-0.5

+0.8

V