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WSF2816-39G2UMA Datasheet(PDF) 3 Page - White Electronic Designs Corporation |
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WSF2816-39G2UMA Datasheet(HTML) 3 Page - White Electronic Designs Corporation |
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3 / 15 page  3 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF2816-39XX May 2003 Rev. 6 White Electronic Designs Corp. reserves the right to change products or specifications without notice. DC CHARACTERISTICS VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C Parameter Symbol Conditions Min Max Unit Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 µA Output Leakage Current ILO SCS# = VIH, OE# = VIH, VOUT = GND to VCC 10 µA SRAM Operating Supply Current x 16 Mode ICCx16 SCS# = VIL, OE# = FCS# = VIH, f = 5MHz, VCC = 5.5 325 mA Standby Current ISB FCS# = SCS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5 20 mA SRAM Output Low Voltage VOL IOL = 8.0mA, VCC = 4.5 0.4 V SRAM Output High Voltage VOH IOH = -4.0mA, VCC = 4.5 2.4 V Flash VCC Active Current for Read (1) ICC1 FCS# = VIL, OE# = SCS# = VIH 120 mA Flash VCC Active Current for Program or Erase (2) ICC2 FCS# = VIL, OE# = SCS# = VIH 140 mA Flash Output Low Voltage VOL IOL = 8.0mA, VCC = 4.5 0.45 V Flash Output High Voltage VOH1 IOH = -2.5 mA, VCC = 4.5 0.85 x VCC V Flash Output High Voltage VOH2 IOH = -100 µA, VCC = 4.5 VCC -0.4 V Flash Low VCC Lock Out Voltage VLKO 3.2 V NOTES: 1. The ICC current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz). The frequency component typically is less than 2mA/MHz, with OE# at VIH. 2. ICC active while Embedded Algorithm (program or erase) is in progress. 3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V ABSOLUTE MAXIMUM RATINGS Parameter Symbol Min Max Unit Operating Temperature TA -55 +125 °C Storage Temperature TSTG -65 +150 °C Signal Voltage Relative to GND VG -0.5 7.0 V Junction Temperature TJ 150 °C Supply Voltage VCC -0.5 7.0 V Parameter Flash Data Retention 20 years Flash Endurance (write/erase cycles) 100,000 NOTES: 1. Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Max Unit Supply Voltage VCC 4.5 5.5 V Input High Voltage VIH 2.2 VCC + 0.3 V Input Low Voltage VIL -0.5 +0.8 V SRAM TRUTH TABLE SCS# OE# SWE# Mode Data I/O Power H X X Standby High Z Standby L L H Read Data Out Active L H H Read High Z Active L X L Write Data In Active CAPACITANCE TA = +25°C Test Symbol Condition Max Unit OE# Capacitance COE VIN = 0V, f = 1.0MHz 50 pF WE# Capacitance CWE VIN = 0V, f = 1.0MHz 20 pF CS# Capacitance CCS VIN = 0V, f = 1.0MHz 20 pF Data I/O Capacitance CI/O VIN = 0V, f = 1.0MHz 20 pF Address Line Capacitance CAD VIN = 0V, f = 1.0MHz 50 pF This parameter is guaranteed by design but not tested. |
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