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WED9LC6816V1312BI Datasheet(PDF) 3 Page - White Electronic Designs Corporation |
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WED9LC6816V1312BI Datasheet(HTML) 3 Page - White Electronic Designs Corporation |
3 / 27 page WED9LC6816V September, 2003 Rev. 1 3 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs White Electronic Designs Corp. reserves the right to change products or specifications without notice. Contact factory for ordering information. Output Functional Descriptions Symbol Type Signal Polarity Function SSCK# Input Pulse Positive Edge The system clock input. All of the SSRAM inputs are sampled on the rising edge of the clock. SSADS# SSOE# SSWE# Input Pulse Active Low When sampled at the positive rising edge of the clock, SSADS#, SSOE#, and SSWE# define the operation to be executed by the SSRAM. SSCE# Input Pulse Active Low SSCE# disable or enable SSRAM device operation. SDCK# Input Pulse Positive Edge The system clock input. All of the SDRAM inputs are sampled on the rising edge of the clock. SDCE Input Pulse Active Low SDCE disable or enable device operation by masking or enabling all inputs except SDCK# and BWE0-3. SDRAS# SDCAS# SDWE# Input Pulse Active Low When sampled at the positive rising edge of the clock, SDCAS#, SDRAS#, and SDWE# define the operation to be executed by the SDRAM. A0-17 SDA10 Input Level — Address bus for SSRAM and SDRAM A0 and A1 are the burst address inputs for the SSRAM During a Bank Active command cycle, A0-11, SDA10 defines the row address (RA0-10) when sampled at the rising clock edge. During a Read or Write command cycle, A0-7 defines the column address (CA0-7) when sampled at the rising clock edge. In addition to the row address, SDA10 is used to invoke Autoprecharge operation at the end of the Burst Read or Write Cycle. If SDA10 is high, autoprecharge is selected and A12 and A13 define the bank to be precharged. If SDA10 is low, autoprecharge is disabled. During a Precharge command cycle, SDA10 is used in conjunction with A12 and A13 to control which bank(s) to precharge. If SDA10 is high, all banks will be precharged regardless of the state of A12 and A13. If SDA10 is low, then A12 and A13 are used to define which bank to precharge. DQ0-31 Input Output Level — Data Input/Output are multiplexed on the same pins. BWE0-3 Input Pulse BWE0-3 perform the byte write enable function for the SSRAM and DQM function for the SDRAM BWE0 is associated with DQ0-7, BWE1 with DQ8-15, BWE2 with DQ16-23 and BWE3 with DQ24-31. VCC, VSS Supply Power and ground for the input buffers and the core logic. VCCQ ,Supply Data base power supply pins, 3.3V (2.5V future). |
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