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WED9LC6816V1312BI Datasheet(PDF) 3 Page - White Electronic Designs Corporation

Part # WED9LC6816V1312BI
Description  256Kx32 SSRAM/4Mx32 SDRAM
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Manufacturer  WEDC [White Electronic Designs Corporation]
Direct Link  http://www.whiteedc.com
Logo WEDC - White Electronic Designs Corporation

WED9LC6816V1312BI Datasheet(HTML) 3 Page - White Electronic Designs Corporation

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WED9LC6816V
September, 2003
Rev. 1
3
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
Contact factory for ordering information.
Output Functional Descriptions
Symbol
Type
Signal
Polarity
Function
SSCK#
Input
Pulse
Positive Edge The system clock input. All of the SSRAM inputs are sampled on the rising edge of the clock.
SSADS#
SSOE#
SSWE#
Input
Pulse
Active Low
When sampled at the positive rising edge of the clock, SSADS#, SSOE#, and SSWE# define
the operation to be executed by the SSRAM.
SSCE#
Input
Pulse
Active Low
SSCE# disable or enable SSRAM device operation.
SDCK#
Input
Pulse
Positive Edge The system clock input. All of the SDRAM inputs are sampled on the rising edge of the clock.
SDCE
Input
Pulse
Active Low
SDCE disable or enable device operation by masking or enabling all inputs except SDCK# and BWE0-3.
SDRAS#
SDCAS#
SDWE#
Input
Pulse
Active Low
When sampled at the positive rising edge of the clock, SDCAS#, SDRAS#, and SDWE#
define the operation to be executed by the SDRAM.
A0-17
SDA10
Input
Level
Address bus for SSRAM and SDRAM
A0 and A1 are the burst address inputs for the SSRAM
During a Bank Active command cycle, A0-11, SDA10 defines the row address (RA0-10) when
sampled at the rising clock edge.
During a Read or Write command cycle, A0-7 defines the column address (CA0-7) when
sampled at the rising clock edge. In addition to the row address, SDA10 is used to invoke
Autoprecharge operation at the end of the Burst Read or Write Cycle. If SDA10 is high,
autoprecharge is selected and A12 and A13 define the bank to be precharged. If SDA10 is low,
autoprecharge is disabled.
During a Precharge command cycle, SDA10 is used in conjunction with A12 and A13 to control
which bank(s) to precharge. If SDA10 is high, all banks will be precharged regardless of
the state of A12 and A13. If SDA10 is low, then A12 and A13 are used to define which bank to
precharge.
DQ0-31
Input
Output
Level
Data Input/Output are multiplexed on the same pins.
BWE0-3
Input
Pulse
BWE0-3 perform the byte write enable function for the SSRAM and DQM function for the SDRAM BWE0 is
associated with DQ0-7, BWE1 with DQ8-15, BWE2 with DQ16-23 and BWE3 with DQ24-31.
VCC, VSS
Supply
Power and ground for the input buffers and the core logic.
VCCQ
,Supply
Data base power supply pins, 3.3V (2.5V future).


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