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WE128K32P-250H1C Datasheet(PDF) 8 Page - White Electronic Designs Corporation |
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WE128K32P-250H1C Datasheet(HTML) 8 Page - White Electronic Designs Corporation |
8 / 14 page 8 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WE128K32-XXX March 2006 Rev. 10 White Electronic Designs Corp. reserves the right to change products or specifications without notice. PAGE WRITE OPERATION The WE128K32-XXX has a page write operation that allows one to 128 bytes of data to be written into the device and consecutively loads during the internal programming period. Successive bytes may be loaded in the same manner after the first data byte has been loaded. An internal timer begins a time out operation at each write cycle. If another write cycle is completed within 150µs or less, a new time out period begins. Each write cycle restarts the delay period. The write cycles can be continued as long as the interval is less than the time out period. The usual procedure is to increment the least significant address lines from A0 through A6 at each write cycle. In this manner a page of up to 128 bytes can be loaded in to the EEPROM in a burst mode before beginning the relatively long interval programming cycle. After the 150µs time out is completed, the EEPROM begins an internal write cycle. During this cycle the entire page of bytes will be written at the same time. The internal programming cycle is the same regardless of the number of bytes accessed. FIGURE 9 – PAGE MODE WRITE WAVEFORMS PAGE WRITE CHARACTERISTICS (VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C) Page Mode Write Characteristics Symbol Unit Parameter Min Max Write Cycle Time, TYP = 6ms tWC 10 ms Address Set-up Time tAS 0ns Address Hold Time (1) tAH 100 ns Data Set-up Time tDS 50 ns Data Hold Time tDH 10 ns Write Pulse Width tWP 100 ns Byte Load Cycle Time tBLC 150 µs Write Pulse Width High tWPH 50 ns 1. Page address must remain valid for duration of write cycle. OE# CS# WE# ADDRESS DATA |
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