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WE256K8-300CI Datasheet(PDF) 9 Page - White Electronic Designs Corporation

Part # WE256K8-300CI
Description  512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091
Download  13 Pages
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Manufacturer  WEDC [White Electronic Designs Corporation]
Direct Link  http://www.whiteedc.com
Logo WEDC - White Electronic Designs Corporation

WE256K8-300CI Datasheet(HTML) 9 Page - White Electronic Designs Corporation

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WE512K8, WE256K8,
WE128K8-XCX
9
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
May 2000
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
PAGE MODE CHARACTERISTICS
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
Min
Max
Unit
Write Cycle Time, TYP = 6mS
tWC
10
ms
Data Set-up Time
tDS
100
ns
Data Hold Time
tDH
10
ns
Write Pulse Width
tWP
150
ns
Byte Load Cycle Time
tBLC
150
µs
Write Pulse Width High
tWPH
50
ns
Device
Block Address
Page Address
WE512K8-XCX
A17-A18
A7-A16
WE256K8-XCX
A15-A17
A6-A14
WE128K8-XCX
A15-A16
A6-A14
PAGE WRITE OPERATION
These devices have a page write operation that allows one
to 64 bytes of data (one to 128 bytes for the WE512K8) to
be written into the device and then simultaneously written
during the internal programming period. Successive bytes
may be loaded in the same manner after the first data
byte has been loaded. An internal timer begins a time
out operation at each write cycle. If another write cycle
is completed within 150µs or less, a new time out period
begins. Each write cycle restarts the delay period. The write
cycles can be continued as long as the interval is less than
the time out period.
The usual procedure is to increment the least significant
address lines from A0 through A5 (A0 through A6 for the
WE512K8) at each write cycle. In this manner a page of
up to 64 bytes (128 bytes for the WE512K8) can be loaded
into the EEPROM in a burst mode before beginning the
relatively long interval programming cycle.
After the 150µs time out is completed, the EEPROM
begins an internal write cycle. During this cycle the entire
page of bytes will be written at the same time. The internal
programming cycle is the same regardless of the number
of bytes accessed.
FIGURE 9 – PAGE WRITE WAVEFORMS
NOTE:
1. Decoded Address Lines must be valid for the duration of the write.
OE#
ADDRESS (1)
CS#
WE#
DATA
The page address must be the same for each byte load
and must be valid during each high to low transition of
WE# (or CS#). The block address also must be the same
for each byte load and must remain valid throughout the
WE# (or CS#) low pulse. The page and block address
lines are summarized below:


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