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W3H64M72E-SBC Datasheet(PDF) 11 Page - White Electronic Designs Corporation |
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W3H64M72E-SBC Datasheet(HTML) 11 Page - White Electronic Designs Corporation |
11 / 30 page W3H64M72E-XSBX 11 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs March 2006 Rev. 1 ADVANCED* White Electronic Designs Corp. reserves the right to change products or specifications without notice. CAS LATENCY (CL) The CAS latency (CL) is defined by bits M4–M6, as shown in Figure 5. CL is the delay, in clock cycles, between the registration of a READ command and the availability of the first bit of output data. The CL can be set to 3, 4, 5, or 6 clocks, depending on the speed grade option being used. DDR2 SDRAM does not support any half-clock latencies. Reserved states should not be used as unknown operation or incompatibility with future versions may result. DDR2 SDRAM also supports a feature called posted CAS additive latency (AL). This feature allows the READ command to be issued prior to tRCD (MIN) by delaying the internal command to the DDR2 SDRAM by AL clocks. Examples of CL = 3 and CL = 4 are shown in Figure 6; both assume AL = 0. If a READ command is registered at clock edge n, and the CL is m clocks, the data will be available nominally coincident with clock edge n+m (this assumes AL = 0). DOUT n + 3 DOUT n + 2 DOUT n + 1 CK CK# COMMAND DQ DQS, DQS# CL = 3 (AL = 0) READ Burst length = 4 Posted CAS# additive latency (AL) = 0 Shown with nominal t AC, tDQSCK, and tDQSQ T0 T1 T2 DON’T CARE TRANSITIONING DATA NOP NOP NOP DOUT n T3 T4 T5 NOP NOP T6 NOP DOUT n + 3 DOUT n + 2 DOUT n + 1 CK CK# COMMAND DQ DQS, DQS# CL = 4 (AL = 0) READ T0 T1 T2 NOP NOP NOP DOUT n T3 T4 T5 NOP NOP T6 NOP FIGURE 6 – CAS LATENCY (CL) |
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