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W3EG7263S-JD3 Datasheet(PDF) 7 Page - White Electronic Designs Corporation |
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W3EG7263S-JD3 Datasheet(HTML) 7 Page - White Electronic Designs Corporation |
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7 / 13 page  7 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs W3EG7263S-D3 -JD3 -AJD3 April 2004 Rev. # 2 PRELIMINARY DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS Notes 1-5, 7; notes appear following parameter tables; 0°C ≤ TA ≤ +70°C; VCC = +2.5V ±0.2V, VCCQ = +2.5V ±0.2V AC Characteristics 335 262/263/265 202 Parameter Symbol Min Max Min Max Min Max Units Notes Access window of DQs from CK, CK# tAC -0.7 +0.7 -0.75 +0.75 -0.8 +0.8 ns CK high-level width tCH 0.45 0.55 0.45 0.55 0.45 0.55 tCK 16 CK low-level width tCL 0.45 0.55 0.45 0.55 0.45 0.55 tCK 16 Clock cycle time CL=2.5 tCK (2.5) 6 13 7.5 13 8 13 ns 22 CL=2 tCK (2) 7.5 13 7.5/10 13 10 13 ns 22 DQ and DM input hold time relative to DQS tDH 0.45 0.5 0.6 ns 14,17 DQ and DM input setup time relative to DQS tDS 0.45 0.5 0.6 ns 14,17 DQ and DM input pulse width (for each input) tDIPW 1.75 1.75 2 ns 17 Access window of DQS from CK, CK# tDQSCK -0.60 +0.60 -0.75 +0.75 -0.8 +0.8 ns DQS input high pulse width tDQSH 0.35 0.35 0.35 tCK DQS input low pulse width tDQSL 0.35 0.35 0.35 tCK DQS-DQ skew, DQS to last DQ valid, per group, per access tDQSQ 0.35 0.5 0.6 ns 13,14 Write command to first DQS latching transition tDQSS 0.75 1.25 0.75 1.25 0.75 1.25 tCK DQS falling edge to CK rising - setup time tDSS 0.2 0.2 0.2 tCK DQS falling edge from CK rising - hold time tDSH 0.2 0.2 0.2 tCK Half clock period tHP tCH, tCL tCH, tCL tCH, tCL ns 18 Data-out high-impedance window from CK, CK# tHZ +0.70 +0.75 +0.8 ns 8,19 Data-out low-impedance window from CK, CK# tLZ -0.70 -0.75 -0.8 ns 8,20 Address and control input hold time (fast slew rate) tIHf 0.75 0.90 1.1 ns 6 Address and control input set-up time (fast slew rate) tISf 0.75 0.90 1.1 ns 6 Address and control input hold time (slow slew rate) tIHs 0.80 1 1.1 ns 6 Address and control input setup time (slow slew rate) tISs 0.80 1 1.1 ns 6 Address and control input pulse width (for each input) tIPW 2.2 2.2 2.2 ns LOAD MODE REGISTER command cycle time tMRD 12 15 16 ns DQ-DQS hold, DQS to first DQ to go non-valid, per access tQH tHP-tQHS tHP-tQHS tHP-tQHS ns 13,14 Data hold skew factor tQHS 0.50 0.75 1 ns ACTIVE to PRECHARGE command tRAS 42 120,000 40 120,000 40 120,000 ns 15 ACTIVE to READ with Auto precharge command tRAP 18 20 20 ns ACTIVE to ACTIVE/AUTO REFRESH command period tRC 60 65 70 ns AUTO REFRESH command period tRFC 72 75 80 ns 21 |
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