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W3E32M72SR-200SBI Datasheet(PDF) 7 Page - White Electronic Designs Corporation |
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W3E32M72SR-200SBI Datasheet(HTML) 7 Page - White Electronic Designs Corporation |
7 / 19 page W3E32M72SR-XSBX 7 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs July 2006 Rev. 3 White Electronic Designs Corp. reserves the right to change products or specifications without notice. TABLE 1 – BURST DEFINITION Burst Length Starting Column Address Order of Accesses Within a Burst Type = Sequential Type = Interleaved 2 A0 0 0-1 0-1 1 1-0 1-0 4 A1 A0 0 0 0-1-2-3 0-1-2-3 0 1 1-2-3-0 1-0-3-2 1 0 2-3-0-1 2-3-0-1 1 1 3-0-1-2 3-2-1-0 8 A2 A1 A0 0 0 0 0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7 0 0 1 1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6 0 1 0 2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5 0 1 1 3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4 1 0 0 4-5-6-7-0-1-2-3 4-5-6-7-0-1-2-3 1 0 1 5-6-7-0-1-2-3-4 5-4-7-6-1-0-3-2 1 1 0 6-7-0-1-2-3-4-5 6-7-4-5-2-3-0-1 1 1 1 7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0 NOTES: 1. For a burst length of two, A1-Ai select two-data-element block; A0 selects the starting column within the block. 2. For a burst length of four, A2-Ai select four-data-element block; A0-1 select the starting column within the block. 3. For a burst length of eight, A3-Ai select eight-data-element block; A0-2 select the starting column within the block. 4. Whenever a boundary of the block is reached within a given sequence above, the following access wraps within the block. FIG. 3 – MODE REGISTER DEFINITION M3 = 0 2 4 8 Reserved Reserved Reserved M3 = 1 2 4 8 Reserved Reserved Reserved Reserved Operating Mode Normal Operation Normal Operation/Reset DLL All other states reserved 00 Valid Valid 0 1 Burst Type Sequential Interleaved CAS Latency Reserved Reserved 2 Reserved Reserved 2.5 Reserved Burst Length M0 0 1 0 1 0 1 0 1 Burst Length CAS Latency BT A9 A7 A6 A5 A4 A3 A8 A2 A1 A0 Mode Register (Mx) Address Bus M1 0 0 1 1 0 0 1 1 M2 0 0 0 0 1 1 1 1 M3 M4 0 1 0 1 0 1 0 1 M5 0 0 1 1 0 0 1 1 M6 0 0 0 0 1 1 1 1 M6-M0 M8 M7 Operating Mode A10 A11 * M14 and M13 (BA0 and BA1 must be "0, 0" to select the base mode register (vs. the extended mode register). 0* 0* BA0 BA1 Reserved Reserved Reserved Reserved M9 M10 M11 0 0 0 10 0 0 0 -- - - - - A12 M12 0 0 - 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 WRITE The WRITE command is used to initiate a burst write access to an active row. The value on the BA0, BA1 inputs selects the bank, and the address provided on inputs A0-9 selects the starting column location. The value on input A10 determines whether or not AUTO PRECHARGE is used. If AUTO PRECHARGE is selected, the row being accessed will be precharged at the end of the WRITE burst; if AUTO PRECHARGE is not selected, the row will remain open for subsequent accesses. Input data appearing on the DQ is written to the memory array subject to the DQM input logic level appearing coincident with the data. If a given DQM signal is registered LOW, the corresponding data will be written to memory; if the DQM signal is registered HIGH, the corresponding data inputs will be ignored, and a WRITE will not be executed to that byte/column location. PRECHARGE The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be available for a subsequent row access a specified time (tRP) after the PRECHARGE command is issued. Except in the case of concurrent auto precharge, where a READ or WRITE command to a different bank is allowed as long as it does not interrupt the data transfer in the current bank and does not violate any other timing parameters. Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank is to be precharged, inputs BA0, BA1 select the bank. Otherwise BA0, BA1 are treated as “Don’t Care.” Once a bank has been precharged, it is in the idle state and |
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