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EM6352YSC3B4.4 Datasheet(PDF) 3 Page - EM Microelectronic - MARIN SA |
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EM6352YSC3B4.4 Datasheet(HTML) 3 Page - EM Microelectronic - MARIN SA |
3 / 7 page EM6352 Copyright © 2006, EM Microelectronic-Marin SA 03/06 – rev.I 3 www.emmicroelectronic.com Absolute Maximum Ratings Parameter Symbol Conditions Voltage at VDD to GND VDD -0.3V to +6V Minimum voltage at any signal pin VMIN GND - 0.3V Maximum voltage at any signal pin VMAX VDD + 0.3V Electrostatic discharge max. to MIL-STD-883C method 3015.7 with ref. to VSS VESD 2000V Max. soldering conditions TMAX 250°C x 10s Storage Temperature Range TSTG -65°C to +150°C Stresses above these listed maximum ratings may cause permanent damages to the device. Exposure beyond specified operating conditions may affect device reliability or cause malfunction. Handling Procedures This device has built-in protection against high static voltages or electric fields; however, anti-static precautions must be taken as for any other CMOS component. Unless otherwise specified, proper operation can only occur when all terminal voltages are kept within the voltage range. Unused inputs must always be tied to a defined logic voltage level. Operating Conditions Parameter Symbol Min Max Unit Supply voltage (note 1) VDD 0.8 5.5 V Operating Temperature TA -40 +125 °C Electrical Characteristics Unless otherwise specified: VDD= 0.8V to 5.5V, TA=+25°C (note 1). Parameter Symbol Conditions Min Typ Max Unit +25°C - 4.5 VDD=1.5V -40°C to +125°C - 2.1 7 +25°C - 5.4 VDD=3.3V -40°C to +125°C - 2.7 8.3 +25°C - 6.3 Supply current (note 2) IDD VDD=5.0V -40°C to +125°C - 3.2 9.6 µA EM6352 – 1.3 1.290 1.31 1.330 EM6352 – 1.4 1.359 1.38 1.401 EM6352 – 1.6 1.546 1.57 1.594 EM6352 – 1.7 1.635 1.66 1.685 EM6352 – 1.8 1.773 1.80 1.827 EM6352 – 2.2 2.167 2.20 2.233 EM6352 – 2.26 2.226 2.26 2.294 EM6352 – 2.6 2.591 2.63 2.669 EM6352 – 2.9 2.886 2.93 2.974 EM6352 – 3.1 3.034 3.08 3.126 EM6352 – 4.4 4.334 4.40 4.466 Threshold voltage (note 3) VTH EM6352 – 4.6 4.561 4.63 4.699 V Threshold voltage temperature coefficient (note 4) A TH T V ∆ ∆ TA = -40°C to +125°C - ±50 - ppm/°C Threshold hysteresis VHYS - 2.1%•VTH - V Note 1: Production tested at +25°C only. Over temperature limits are guaranteed by design, not production tested. VDD min=0.9V for active-high versions (EM6352Z). Note 2: RESET (RESET) open. Note 3: Threshold voltage is specified for VDD falling. Note 4: Typical variation ∆VTH of VTH at a given temperature TA is calculated as follows: C 25 T V T V ) T T ( V A TH A TH A TH ° − × × ∆ ∆ = = ∆ Example: for version VTH=2.93V, variation at TA=70°C is equal to ∆VTH(70°C)=±50•10 -6 x 2.93 x (70-25)=±6.59mV |
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