FDU8782 datasheet(4/6 Pages) FAIRCHILD

Part #	FDU8782

Description	N-Channel PowerTrench MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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4 / 6 page

FDD8782/FDU8782 Rev. A

www.fairchildsemi.com

4

Figure 7.

0

5

10

15

20

25

0

2

4

6

8

10

VDD = 13V

VDD = 18V

VDD = 8V

Qg, GATE CHARGE(nC)

Gate Charge Characteristics

Figure 8.

0.1

1

10

100

1000

f = 1MHz

VGS = 0V

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

3000

30

Capacitance vs Drain to Source Voltage

Figure 9.

0.01

0.1

1

10

100

1

10

TJ = 25oC

TJ = 125oC

TJ = 150oC

t

AV, TIME IN AVALANCHE(ms)

300

50

Unclamped Inductive Switching

Capability

Figure 10.

25

50

75

100

125

150

175

0

10

20

30

40

50

60

TC, CASE TEMPERATURE(oC)

RθJC = 3.0

oC/W

VGS = 4.5V

VGS = 10V

Maximum Continuous Drain Current vs

Case Temperature

Figure 11.

110

0.1

1

10

100

10us

500

1ms

10ms

100us

VDS, DRAIN TO SOURCE VOLTAGE (V)

SINGLE PULSE

TJ = MAX RATED

TC = 25oC

OPERATION IN THIS

AREA MAY BE

LIMITED BY

rDS(on)

DC

50

LIMITED BY

PACKAGE

Forward Bias Safe Operating Area

Figure 12. Single

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

100

1000

SINGLE PULSE

V

GS = 10V

t

, PULSE WIDTH (s)

7000

TC = 25oC

I = I25

FOR TEMPERATURES

ABOVE 25oC DERATE PEAK

CURRENT AS FOLLOWS:

175 TC

–

150

-----------------------

Pulse Maximum Power

Dissipation

Typical Characteristics T

J = 25°C unless otherwise noted

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