NX29F010 datasheet(16/25 Pages) ETC1

Part #	NX29F010

Description	1M-BIT (128K x 8-bit) CMOS, 5.0V Only ULTRA-FAST SECTORED FLASH MEMORY

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NX29F010

16

NexFlash Technologies, Inc.

NXPF001F-0600

06/22/00 ©

AC CHARACTERISTICS: ERASE AND PROGRAM

Std.

-35

-45

-55

-70

-90

Symbol Parameter

Min. Max.

Unit

tWC

Write Cycle Time(1)

35

—

45

—

45

—

45

—

90

—

ns

tAS

Address Setup Time

0

—

0

—

0

—

0

—

0

—

ns

tAH

Address Hold Time

30

—

35

—

45

—

45

—

45

—

ns

tDS

Data Setup Time

15

—

20

—

20

—

30

—

45

—

ns

tDH

Data Hold Time

0

—

0

—

0

—

0

—

0

—

ns

tGHWL

Read Recovery Time before Write 0

—

0

—

0

—

0

—

0

—

ns

(

OE HIGH to WE LOW)

tCS

CE Setup Time

0

—

0

—

0

—

0

—

0

—

ns

tCH

CE Hold Time

0

—

0

—

0

—

0

—

0

—

ns

tWP

Write Pulse Width

20

—

25

—

30

—

35

—

45

—

ns

tWPH

Write Pulse Width HIGH

20

—

20

—

20

—

20

—

20

—

ns

tWHWH1

Byte Programming Operation(2)

20

—

20

—

20

—

20

—

20

—

µs

tWHWH2

Sector Erase Operation(2)

1.0

—

1.0

—

1.0

—

1.0

—

1.0

—

sec

tVCS

VCC Setup Time(1)

50

—

50

—

1.0

—

1.0

—

1.0

—

µs

Note:

1. Not 100% tested.

TEST CONDITIONS

Table 6. AC Test Specifications

TestConditions

35 ns

AllOthers

Unit

OutputLoad

1 TTL Gate

Output Load Capacitance, CL

30

100

pF

(including jig capacitance)

Input Rise and Fall Times

5

20

ns

Input Pulse Levels

0 to 3.0

0.45 to 2.4

V

InputTimingMeasurement

1.5

0.8

V

ReferenceLevels

OutputTimingMeasurement

1.5

2.0

V

ReferenceLevels

DEVICE

UNDER

TEST

6.2K

Ω

2.7K

Ω

Vcc = 5.0V

CL

Figure 12. Test Setup

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