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EDI7F2332MV100BNC Datasheet(PDF) 1 Page - White Electronic Designs Corporation

Part # EDI7F2332MV100BNC
Description  2Mx32 FLASH MODULE
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Manufacturer  WEDC [White Electronic Designs Corporation]
Direct Link  http://www.whiteedc.com
Logo WEDC - White Electronic Designs Corporation

EDI7F2332MV100BNC Datasheet(HTML) 1 Page - White Electronic Designs Corporation

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White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
EDI7F332MV
Sept, 2002
Rev. 0
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
White Electronic Designs
2Mx32 and 2x2Mx32 Densities
Based on AMD - AM29LV017B Flash Device
Fast Read Access Time - 90ns
3.3V-Only Reprogramming
Sector Erase Architecture
Uniform sectors of 64 Kbytes each
Any combination of sectors can be erased
Supports full chip erase
Sector Protection
Hardware method that disables any
combination of sector from write or erase
operations
Embedded Erase Algorithms
Automatically preprograms and erases the chip
or any combination of sectors
Embedded Program Algorithms
Automatically programs and verifies data at
specified address
FIG. 1 BLOCK DIAGRAMS
EDI7F332MV-BNC: 2Mx32, 80 PIN SIMM
EDI7F2332MV-BNC: 2x2Mx32, 80 PIN SIMM
2Mx32 FLASH MODULE
FEATURES
A0-A20
G#
DQ0-DQ7
DQ8-DQ15
DQ16-DQ23
DQ24-DQ31
2M x 8
2M x 8
2M x 8
2M x 8
E0#
W0#
W1#
W2#
W3#
A0-A20
G#
DQ0-DQ7
DQ8-DQ15
DQ16-DQ23
DQ24-DQ31
2M x 8
2M x 8
2M x 8
2M x 8
2M x 8
2M x 8
2M x 8
2M x 8
E1#
E0#
W0#
W1#
W2#
W3#
Data Polling and Toggle Bit feature for detection of
program or erase cycle completion
Low Power Dissipation
30mA per Device Active Write Current
5µA per Device CMOS Standby Current
Typical Endurance >100,000 Cycles
Single 3.0V ±10% Supply
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Range
Package
80 Pin SIMM (JEDEC)
DESCRIPTION
The EDI7F332MV and EDI7F2332MV are organized as
one and two banks of 2Mx32 respectively. The modules are
based on AMDs AM29LV017B- 2Mx8 Flash device in TSOP
packages which are mounted on an FR4 substrate.
Both modules offer access times between 90 and 120ns
allowing for operation of high-speed microprocessors
without wait states.


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