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EM4169A5WT11E Datasheet(PDF) 2 Page - EM Microelectronic - MARIN SA |
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EM4169A5WT11E Datasheet(HTML) 2 Page - EM Microelectronic - MARIN SA |
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2 / 15 page  EM4069 EM4169 Copyright 2003, EM Microelectronic-Marin SA 2 www.emmicroelectronic.com Absolute Maximum Ratings VSS = 0V Parameter Symbol Conditions Power supply VDD -0.3 to +5.5V Input Voltage (pads TST, TCP, TIO) VPIN - 0.3 to VDD+0.3V Input current on COIL1 ICOIL1 -30 to +30mA Input voltage on COIL1 VCOIL1 -10 to +10V Storage temperature TSTORE -55 to +125°C Electrostatic discharge to MIL-STD-883C method 3015 VESD 1000V Stresses above these listed maximum ratings may cause permanent damage to the device. Exposure beyond specified electrical characteristics may affect device reliability or cause malfunction. Electrical parameters and functionality are not guaranteed when the circuit is exposed to light. Handling Procedures This device has built-in protection against high static voltages or electric fields. However due to the unique properties of this device, anti-static precautions should be taken as for any other CMOS component. Unless otherwise specified, proper operation can only occur when all terminal voltages are kept within the supply voltage range. Operating Conditions VSS = 0V Parameter Symbol Min. Typ. Max. Units Operating temperature AC voltage on coil 1 Maximum coil current Frequency on coil 1 TOP VCOIL1 ICOIL1 FCOIL1 -40 -10 100 +25 * 125 +85 10 150 °C Vpp mA kHz *) Maximum voltage is defined by forcing 10mA on Coil1 – Vss Electrical Characteristics Unless otherwise specified: VDD= 1.0V to 5.5V, TA=-40 to +125°C. Parameter Symbol Condition Min. Typ. Max. Units Regulated Supply Voltage VDD ICOIL1 = 10mA 3.0 3.5 4.0 V Reg. Voltage reading EEPROM (note 3) VRD 2.0 V Supply current in read mode IRD 3.8 5,5 µA Reg. Voltage writing EEPROM VWR 2.5 V Supply current write mode IWR VDD = 3.5 V 50 100 µA Power Check Voltage VPC 2.4 2.8 3.15 V Modulator ON voltage drop Von1 ICOIL1 = ±100 µA 1.2 1.45 1.75 V Modulator ON voltage drop Von2 ICOIL1 = ±1 mA 33.6 4.5 V POR level VPOR Rising edge 1.5 1.85 2.20 V Clock extractor VCOIL1 0.5 VPP Peak detector threshold. Vpd VDD = 3.3 V 3.2 4 4.6 VPP Peak detector hysteresis Vpdh VDD = 3.3 V 20 100 200 mV Resonance capacitor (note 1) CR 32 kHz, 0.3Vpp 78 pF EEPROM data retention (note 2) TRET TOP = 55°C 10 years EEPROM write cycles NCY VDD = 3.6 V 100000 cycles Note 1: Value of the resonance capacitor may vary in limits of ± 12% Statistics show a variation of capacitance within one lot of ± 5%. These figures are given as information only. Note 2: Based on 1000 hours at 150°C. Note 3: VRD must be higher than VPOR Level. |
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