SI3499DV datasheet(2/6 Pages) VISHAY

Part #	SI3499DV

Description	P-Channel 1.5-V (G-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si3499DV

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 73138

Pending—Rev. A, 18-Oct-04

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 mA

−0.35

−0.75

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "5 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = −8 V, VGS = 0 V

−1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = −8 V, VGS = 0 V, TJ = 85_C

−10

mA

On-State Drain Currenta

ID(on)

VDS = −5 V, VGS = −4.5 V

−20

A

VGS = −4.5 V, ID = −7 A

0.019

0.023

Drain Source On State Resistancea

rDS( )

VGS = −2.5 V, ID = −6.2 A

0.024

0.029

W

Drain-Source On-State Resistancea

rDS(on)

VGS = −1.8 V, ID = −5.2 A

0.028

0.036

W

VGS = −1.5 V, ID = −3 A

0.035

0.048

Forward Transconductancea

gfs

VDS = −5 V, ID = −7 A

28

S

Diode Forward Voltagea

VSD

IS = −1.7 A, VGS = 0 V

−0.63

−1.1

V

Dynamicb

Total Gate Charge

Qg

28

42

Gate-Source Charge

Qgs

VDS = −4 V, VGS = −4.5 V, ID = −7 A

2.9

nC

Gate-Drain Charge

Qgd

DS

, GS

, D

5.8

Gate Resistance

Rg

4

8.5

13

W

Turn-On Delay Time

td(on)

27

40

Rise Time

tr

VDD = −4 V, RL = 4 W

65

100

Turn-Off Delay Time

td(off)

VDD = −4 V, RL = 4 W

ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W

210

315

ns

Fall Time

tf

g

110

165

ns

Source-Drain Reverse Recovery Time

trr

IF = −1.7 A, di/dt = 100 A/ms

40

70

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

5

10

15

20

25

30

0.0

0.4

0.8

1.2

1.6

2.0

0

5

10

15

20

25

30

0

1234

5

VGS = 5 thru 2 V

TC = 125_C

−55_C

25_C

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

1 V

1.5 V

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