ZXMP7A17K

Issue 1 - March 2006

4

www.zetex.com

© Zetex Semiconductors plc 2006

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Static

Drain-source breakdown

voltage

-70

V

Zero gate voltage drain

current

-1

Gate-body leakage

100

nA

-1.0

V

Static drain-source on-state

NOTES:

(*) Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

0.16

0.25

4.4

S

Dynamic(‡)

Input capacitance

635

pF

f=1MHz

Output capacitance

52

pF

Reverse transfer capacitance

42.5

pF

(†) Switching characteristics are independent of operating junction temperature.

(‡) For design aid only, not subject to production testing.

Turn-on-delay time

2.5

ns

Rise time

3.4

ns

Turn-off delay time

27.9

ns

Fall time

8ns

Total gate charge

9.6

nC

Total gate charge

18

nC

Gate-source charge

1.77

nC

Gate drain charge

3.66

nC

Source-drain diode

Diode forward voltage(*)

-0.85

-0.95

V

Reverse recovery time(‡)

29.8

ns

di/dt=100A/ s

Reverse recovery charge(‡)

38.5

nC