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EM4056B6WW11E Datasheet(PDF) 3 Page - EM Microelectronic - MARIN SA |
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EM4056B6WW11E Datasheet(HTML) 3 Page - EM Microelectronic - MARIN SA |
3 / 14 page EM4056 Copyright © 2005, EM Microelectronic-Marin SA 3 www.emmicroelectronic.com Absolute Maximum Ratings Parameter Symbol Min. Max. Units Voltage on Power Supply pads VDD -0.3 6.0 V Voltage on other pads VPAD VSS - 0.3 VDD+ 0.3 V Max. AC peak current induced on COIL1 and COIL2 ICOIL - 30 + 30 mAp Storage temperature TSTORE -55 +125 oC Operating temperature TOP -40 +85 oC Electrostatic discharge max. to MIL-STS-883C method 3015 VESD 1000 V Stresses above these listed maximum ratings may cause permanent damages to the device. Exposure beyond specified operating conditions may affect device reliability or cause malfunction. Handling Procedures This device has built-in protection against high static voltages or electric fields; however, anti-static precautions must be taken as for any other CMOS component. Unless otherwise specified, proper operation can only occur when all terminal voltages are kept within the voltage range. Unused inputs must always be tied to a defined logic voltage level. Operating Conditions Parameter Symbol Min Max Units Max. AC Voltage on COIL VCOIL (Note 1) Vpp Max. AC coil current ICOIL -10 +10 mAp Carrier frequency fCOIL 100 150 kHz Operating temperature TOP -40 +85 °C Note 1: Defined by forcing 10mA on Coil1-Coil2 Electrical Characteristics Unless otherwise specified : VDD = 4.0 V, VSS = 0 V, TOP = 25°C, VCOIL = 4.5 Vpp, fCOIL = 125 KHz Sine wave Parameter Symbol Conditions Min Typ Max Unit Supply voltage (not regulated) VPOS-REG (Note1) V Supply voltage (regulated) VDD VPOS-REG = max (note 1) 3.4 4.3 V Min. EEPROM Read voltage VRD Read mode (note 2) 2.5 V Min. EEPROM Write voltage VWR Write mode 2.5 V EEPROM Read current IRD Read mode 19 25 µA EEPROM Write current IWR Write mode 60 80 µA Power check EEPROM write current IPWCHK VDD = 4.0 V 70 95 µA EEPROM pwr check threshold voltage VPWCHK 2.52 2.75 3.10 V EEPROM data endurance NCY Erase all / Write all 105 cycle EEPROM retention (note 3) TRET TOP = 55 oC after 105 cycles 10 year Voltage drop VCOIL- VSS on modulator VON ICOIL = 100 µA ICOIL = 5 mA 0.50 2.50 V V Resonance capacitor CCOIL 330 340 350 pF POR voltage (high) VPRH VDD rising 2.0 2.6 V MONOFLOP delay TMONO 25 50 85 µs Min. voltage of clock extractor 1 (note 4) VCLK1min Vcoil1-coil2 (min for extraction) 4.5 Vpp Min. voltage of clock extractor 2 (note 5) VCLK2min Vcoil1-coil2 (min for extraction) 1.0 Vpp Note 1: Max. supply voltage (not regulated) is defined by forcing a DC current 10 mAp in pins COIL1-COIL2 Note 2: The circuit is not functional under low level POR voltage Note 4: Uplink Note 3: Based on 1000 hours measurement at 150oC Note 5: downlink |
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