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HX2300 Datasheet(PDF) 2 Page - Honeywell Solid State Electronics Center |
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HX2300 Datasheet(HTML) 2 Page - Honeywell Solid State Electronics Center |
2 / 2 page 2 HX2000/HX2000r Helping You Control Your World Honeywell reserves the right to make changes to any products or technology herein to improve reliability, function or design. Honeywell does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others. 900144 Rev.A 2/97 high impedance off-state buffer feature allows users to power down portions of their system for power savings or for cold sparing. Logic designers need not have prior experience in radiation hardening. Honeywell’s VDS™ Toolkit and RICMOS IV SOI libraries provide the necessary guidance to achieve first pass design success. The VDS Toolkit supports industry standard platforms including those offered by Mentor Graphics and Synopsys. Honeywell can perform design translations to the HX2000 arrays from other CAD platforms. Our synthesis capabilities allow customers to use familiar CAD tools and libraries to map existing designs to Honeywell library components. The HX2000 family of gate arrays is the right choice for your high reliability applications demanding high density and radiation performance. To learn more about Honeywell’s variety of space components, call us at 612-954-2888. To learn more about Honeywell Solid State Electronics Center, visit our web site at http://www.ssec.honeywell.com (1) Projected * Planned Array (2) Design and package dependent. s c i t s i r e t c a r a h C 0 0 0 2 X H* 0 4 0 2 X H0 8 0 2 X H0 6 1 2 X H0 0 3 2 X H0 0 4 2 X H t n u o C e t a G e r o C l a t o TK 0 4K 5 8K 0 6 1K 5 9 2K 0 9 3 e t a G e l b a s Ul a t e M r e y a L - 3 t n u o C ) 1 ( l a t e M r e y a L - 4 K 7 2 K 6 3 K 3 5 K 1 7 K 1 9 K 2 3 1 K 6 5 1 K 6 2 2 K 0 0 2 K 0 9 2 O / I e i D m u m i x a M2 3 16 7 10 4 26 3 32 7 3 ) 2 ( O / I e g a k c a P m u m i x a MD B T6 7 10 4 20 2 30 2 3 D N A N t u p n I 2 — y a l e D l a c i p y T V 3 . 3 t a s p 0 9 2 , V 0 . 5 t a s p 0 7 2 O / I e l b a t c e l e S e t a t S - e e r h T , l a n o i t c e r i D - i B , r e v i e c e R , r e v i r D s l e v e L e c a f r e t n I O / I r e g g i r T t t i m h c S , L T T , S O M C z H M / e t a G / W µ , n o i t a p i s s i D r e w o P l a c i p y TV 3 . 3 @ 2 2 . 0 , V 0 . 5 @ 6 . 0 0 0 0 2 X H e g a t l o V g n i t a r e p O r 0 0 0 2 X H % 0 1 ± V 0 . 5 ) O / I ( % 0 1 ± V 0 . 5 r o / d n a ) O / I & e r o C ( % 0 1 ± V 3 . 3 e r u t a r e p m e T g n i t a r e p OC ° 5 2 1 o t C ° 5 5 - y g o l o n h c e T s s e c o r PI O S V I ™ S O M C I R 0 0 0 2 X H y r t e m o e G m u m i n i M r 0 0 0 2 X H L m µ 5 6 . 0 f f e ) V 5 ( n w a r D m µ 8 . 0 / L m µ 5 5 . 0 f f e ) V 3 . 3 ( n w a r D m µ 7 . 0 / |
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