PNP General Purpose Transistors

1.FR-5=1.0 x 0.75 x 0.062 in

2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina

MAXIMUM RATINGS

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base VOltage

Collector Current-Continuous

Symbol

VCEO

VCBO

VEBO

IC

2907

-40

-60

2907A

-60

Unit

Vdc

Vdc

Vdc

mAdc

-600

-5.0

Rating

Total Device Dissipation FR-5 Board (1)

TA=25 C

Derate above 25 C

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Ambient

Total Device Dissipation

Alumina Substrate, (2) TA=25 C

Derate above 25 C

Junction and Storage,Temperature

Characteristics

TJ,Tstg

R JA

PD

PD

Symbol

Max

225

1.8

556

300

2.4

417

-55 to +150

Unit

mW

mW/ C

C/W

mW

mW/ C

C/W

C

THERMAL CHARACTERISTICS

MMBT2907=M2B; MMBT2907A=2F

DEVICE MARKING

Characteristics

Symbol

Min

Max

Unit

ELECTRICAL CHARACTERISTICS

Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0)

Collector-Base Breakdown Voltage (IC= -10 µAdc, IE=0)

Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0)

Collector Cutoff Current (VCE= -30 Vdc,VEB (0ff)= -0.5Vdc)

Collector Cutoff Current (VCB= -50 Vdc, IE=0)

(VCB= -50Vdc, IE=0,TA=125 C)

Base Cutoff Current (VCE= -30Vdc,VEB(off)= -0.5Vdc)

MMBT2907

MMBT2907A

MMBT2907

MMBT22907A

MMBT2907

MMBT2907A

MMBT2907A

V(BR)CEO

V(BR)CBO

V(BR)EBO

ICEX

ICBO

IB

-40

-60

-60

-5.0

-

-

-

-

-

-

-

-

-

-

-50

-0.020

-0.010

-20

-10

-50

Vdc

Vdc

Vdc

nAdc

nAdc

nAdc

OFF CHARACTERISTICS

MMBT2907

MMBT2907A

1

2

3

BASE

COLLECTOR

EMITTER

WEITRON

http://www.weitron.com.tw

R JA

q

q

SOT-23

1

2

3